MRF8S9200NR3

Mfr. #:: MRF8S9200NR3
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors HV8 900MHz 58W OM780-2
生命週期:: 製造商新產品
數據表:: MRF8S9200NR3 數據表
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ECAD Model:
更多信息:: MRF8S9200NR3 更多信息

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: Y

晶體管極性：: N通道

技術：: 矽

Vds - 漏源擊穿電壓：: 70 V

獲得：: 19.5 dB

輸出功率：: 58 W

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: OM-780-2

打包：: 捲軸

配置：: 單身的

工作頻率：: 920 MHz to 960 MHz

系列：: MRF8S9200N

品牌：: 恩智浦/飛思卡爾

濕氣敏感：: 是的

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 250

子類別：: MOSFET

Vgs - 柵源電壓：: 10 V

Vgs th - 柵源閾值電壓：: 2.3 V

第 # 部分別名：: 935314116528

單位重量：: 0.108683 oz

Tags: MRF8S9200NR, MRF8S9200N, MRF8S9200, MRF8S920, MRF8S92, MRF8S9, MRF8S, MRF8, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF8S9200NR3 描述

***escale Semiconductor: Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V

***W: RF Power Transistor,920 to 960 MHz, 200 W, Typ Gain in dB is 19.9 @ 940 MHz, 28 V, LDMOS, SOT1823

***p One Stop Global: Trans RF MOSFET N-CH 70V 3-Pin OM-780 EP T/R

***et Europe: Trans MOSFET N-CH 70V 3-Pin OM-780 EP T/R

***hardson RFPD: RF POWER TRANSISTOR LDMOS

***i-Key: FET RF 70V 940MHZ OM780-2

***et: HV8 900MHZ 58W OM780-2

MRF8S9200NR3 更多信息

MRF8S9200N Lateral N-Channel RF Power MOSFET: NXP MRF8S9200N Lateral N-Channel RF Power MOSFET is designed for CDMA base station applications with frequencies from 920 to 960 MHz. Features include that it is characterized with series equivalent large-signal impedance parameters and common source S-parameters, is internally matched for ease of use, has integrated ESD protection, and has a greater negative gate-source voltage range for improved Class C operation. It can be used in Class AB and Class C for all typical cellular base station modulation formats.Learn More

Market price

型號	製造商	描述	庫存	價格
MRF8S9200NR3 DISTI # MRF8S9200NR3-ND	NXP Semiconductors	FET RF 70V 940MHZ OM780-2 RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$84.0234
MRF8S9200NR3 DISTI # MRF8S9200NR3	Avnet, Inc.	Trans MOSFET N-CH 70V 3-Pin OM-780 EP T/R (Alt: MRF8S9200NR3) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 0
MRF8S9200NR3 DISTI # MRF8S9200NR3	Avnet, Inc.	Trans MOSFET N-CH 70V 3-Pin OM-780 EP T/R - Tape and Reel (Alt: MRF8S9200NR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	250:$91.9900 500:$88.3900 1000:$84.9900 1500:$81.8900 2500:$80.2900
MRF8S9200NR3 DISTI # 841-MRF8S9200NR3	NXP Semiconductors	RF MOSFET Transistors HV8 900MHz 58W OM780-2 RoHS: Compliant	0	250:$82.1400
MRF8S9200NR3 DISTI # MRF8S9200NR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	3443	250:$94.7700

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