FS100R12PT4

Mfr. #:: FS100R12PT4
製造商:: Infineon Technologies
描述:: IGBT Modules 3 PHASE POWER BRIDGE
生命週期:: 製造商新產品
數據表:: FS100R12PT4 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT 模塊

RoHS：: Y

產品：: IGBT 矽模塊

集電極-發射極電壓 VCEO 最大值：: 1200 V

集電極-發射極飽和電壓：: 2.15 V

25 C 時的連續集電極電流：: 135 A

柵極-發射極漏電流：: 100 nA

Pd - 功耗：: 500 W

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

打包：: 托盤

品牌：: 英飛凌科技

安裝方式：: 底盤安裝

最大柵極發射極電壓：: 20 V

產品類別：: IGBT 模塊

出廠包裝數量：: 6

子類別：: IGBT

商品名：: 戰壕

第 # 部分別名：: FS100R12PT4BOSA1 SP000485594

單位重量：: 13.580475 oz

Tags: FS100R12P, FS100R12, FS100R1, FS100R, FS100, FS10, FS1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FS100R12PT4 描述

***et Europe: Trans IGBT Module N-CH 1.2KV 135A 19-Pin

***ment14 APAC: IGBT, POW, QUAD W NTC, 1200V, 100A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:500W

***ineon: EconoPACK 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups

Market price

型號	製造商	描述	庫存	價格
FS100R12PT4BOSA1 DISTI # FS100R12PT4BOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 600V 100A RoHS: Not compliant Min Qty: 6 Container: Bulk	Temporarily Out of Stock	6:$142.1867
FS100R12PT4 DISTI # SP000485594	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594) RoHS: Compliant Min Qty: 1	Europe - 3	1:€170.5900 10:€137.8900 25:€125.2900 50:€121.0900 100:€117.0900 500:€113.6900 1000:€111.0900
FS100R12PT4BOSA1 DISTI # FS100R12PT4BOSA1	Infineon Technologies AG	MEDIUM POWER ECONO - Trays (Alt: FS100R12PT4BOSA1) RoHS: Compliant Min Qty: 6 Container: Tray	Americas - 18	6:$128.9900 12:$125.4900 24:$122.2900 36:$119.1900 60:$116.1900
FS100R12PT4 DISTI # SP000485594	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594) RoHS: Compliant Min Qty: 1	Europe - 0	1:€145.4900 10:€133.3900 25:€127.9900 50:€123.0900 100:€118.5900 500:€114.2900 1000:€106.6900
FS100R12PT4 DISTI # 84R7213	Infineon Technologies AG	IGBT Module,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:20Pins,Product Range:- RoHS Compliant: Yes	0
FS100R12PT4	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	1611	1000:$113.7000 500:$119.6800 100:$124.6000 25:$129.9400 1:$139.9400
FS100R12PT4BOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	1	1000:$113.7000 500:$119.6800 100:$124.6000 25:$129.9400 1:$139.9400
FS100R12PT4 DISTI # 726-FS100R12PT4	Infineon Technologies AG	IGBT Modules 3 PHASE POWER BRIDGE RoHS: Compliant	4	1:$144.1100 5:$141.2800 10:$134.6900 25:$131.8700