FDMS0309AS

Mfr. #:: FDMS0309AS
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET PT8 NCH 30/20V S PQF
生命週期:: 製造商新產品
數據表:: FDMS0309AS 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: Power-56-8

通道數：: 2 Channel

晶體管極性：: N通道

配置：: 雙重的

商品名：: PowerTrench 同步場效應晶體管

打包：: 捲軸

高度：: 1.1 mm

長度：: 6 mm

系列：: FDMS0309AS

晶體管類型：: 2 N-channel

寬度：: 5 mm

品牌：: 安森美半導體/飛兆半導體

產品類別：: MOSFET

出廠包裝數量：: 3000

子類別：: MOSFET

單位重量：: 0.002402 oz

Tags: FDMS0309A, FDMS0309, FDMS030, FDMS03, FDMS0, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS0309AS 描述

***ure Electronics: FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56

*** Stop Electro: Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***roFlash: Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET¬Æ Power Mosfet - PQFN 5 x 6 mm

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ark: T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6

***ical: Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R

***Yang: Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***emi: N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ

***r Electronics: Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

***nell: MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ical: Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

***ure Electronics: Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

***et: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R

***nell: MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance

***nell: MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ow.cn: Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R

***rchild Semiconductor: The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***nell: MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Market price

型號	製造商	描述	庫存	價格
FDMS0309AS DISTI # FDMS0309ASCT-ND	ON Semiconductor	MOSFET N-CH 30V 21A PT8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5898In Stock	1000:$0.2859 500:$0.3573 100:$0.4824 10:$0.6250 1:$0.7100
FDMS0309AS DISTI # FDMS0309ASDKR-ND	ON Semiconductor	MOSFET N-CH 30V 21A PT8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5898In Stock	1000:$0.2859 500:$0.3573 100:$0.4824 10:$0.6250 1:$0.7100
FDMS0309AS DISTI # FDMS0309ASTR-ND	ON Semiconductor	MOSFET N-CH 30V 21A PT8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.2515
FDMS0309AS_SN00347 DISTI # FDMS0309AS_SN00347-ND	ON Semiconductor	MOSFET N-CH RoHS: Compliant Min Qty: 1 Container: Tape & Reel (TR)	Limited Supply - Call
FDMS0309AS DISTI # FDMS0309AS	ON Semiconductor	Trans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0309AS) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2639 6000:$0.2619 12000:$0.2579 18000:$0.2549 30000:$0.2489
FDMS0309AS DISTI # 68X0370	ON Semiconductor	PT8 NCH 30/20V S PQF / REEL	0	24000:$0.2140 9000:$0.2210 1:$0.2290
FDMS0309AS DISTI # 512-FDMS0309AS	ON Semiconductor	MOSFET PT8 NCH 30/20V S PQF RoHS: Compliant	8995	1:$0.5900 10:$0.4890 100:$0.3160 1000:$0.2530 3000:$0.2130 9000:$0.2060 24000:$0.1980

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