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SI8802DB-T2-E1

SI8802DB-T2-E1
Mfr. #:
SI8802DB-T2-E1
製造商:
Vishay
描述:
MOSFET N-CH 8V MICROFOOT
生命週期:
製造商新產品
數據表:
SI8802DB-T2-E1 數據表
交貨:
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更多信息:
SI8802DB-T2-E1 更多信息
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 單
系列
溝槽FETR
打包
Digi-ReelR 替代包裝
安裝方式
貼片/貼片
包裝盒
4-XFBGA
技術
矽
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
1 Channel
供應商-設備-包
4-Microfoot
配置
單身的
FET型
MOSFET N 溝道，金屬氧化物
最大功率
500mW
晶體管型
1 N-Channel
漏源電壓 Vdss
8V
輸入電容-Ciss-Vds
-
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
54 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
700mV @ 250μA
柵極電荷-Qg-Vgs
6.5nC @ 4.5V
鈀功耗
900 mW
VGS-柵極-源極-電壓
5 V
Id 連續漏極電流
3.5 A
Vds-漏-源-擊穿電壓
8 V
Rds-On-Drain-Source-Resistance
44 mOhms
晶體管極性
N通道
Qg-門電荷
4.3 nC
正向跨導最小值
13 S
Tags
SI8802DB-T, SI8802, SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 8 V 54 mOhm 4.3 nC Surface Mount Power Mosfet - MICRO FOOT
***et
Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Si88xx 8V TrenchFET® Power MOSFETs
Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.Learn More
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
型號 製造商 描述 庫存 價格
SI8802DB-T2-E1
DISTI # V72:2272_09216581		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 25:$0.3335
  • 10:$0.3705
  • 1:$0.4750
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1CT-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1DKR-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10259In Stock
  • 1000:$0.1695
  • 500:$0.2193
  • 100:$0.2991
  • 10:$0.3990
  • 1:$0.4700
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1TR-ND		Vishay SiliconixMOSFET N-CH 8V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 3000:$0.1597
SI8802DB-T2-E1
DISTI # 30155844		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		3000
  • 3000:$0.1683
SI8802DB-T2-E1
DISTI # 30883628		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
RoHS: Compliant		2974
  • 1000:$0.1511
  • 500:$0.2014
  • 250:$0.2257
  • 100:$0.2508
  • 56:$0.3335
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8802DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1279
  • 6000:$0.1239
  • 12000:$0.1189
  • 18000:$0.1149
  • 30000:$0.1119
SI8802DB-T2-E1
DISTI # SI8802DB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI8802DB-T2-E1
    DISTI # 99W9639    		Vishay IntertechnologiesMOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
    • 1:$0.1310
    • 3000:$0.1300
    • 6000:$0.1240
    • 12000:$0.1100
    SI8802DB-T2-E1
    DISTI # 04X9769    		Vishay IntertechnologiesMOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV , RoHS Compliant: Yes0
    • 1:$0.2550
    • 10:$0.2470
    • 100:$0.1950
    • 250:$0.1850
    • 500:$0.1730
    • 1000:$0.1390
    SI8802DB-T2-E1
    DISTI # 781-SI8802DB-T2-E1    		Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant    		14450
    • 1:$0.5800
    • 10:$0.3900
    • 100:$0.2640
    • 500:$0.2120
    • 1000:$0.1590
    • 3000:$0.1460
    • 6000:$0.1370
    • 9000:$0.1280
    SI8802DBT2E1Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SI8802DB-T2-E1
      DISTI # C1S803601968173      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2974
      • 250:$0.2257
      • 100:$0.2508
      • 25:$0.3335
      • 10:$0.3705
      SI8802DB-T2-E1Vishay IntertechnologiesMOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
      RoHS: Compliant      		Americas -
        圖片 型號 描述
        SI8802DB-T2-E1

        Mfr.#: SI8802DB-T2-E1

        OMO.#: OMO-SI8802DB-T2-E1

        		 MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
        SI8802DB-T2-E1-CUT TAPE

        Mfr.#: SI8802DB-T2-E1-CUT TAPE

        OMO.#: OMO-SI8802DB-T2-E1-CUT-TAPE-1190

        		 全新原裝
        SI8802DB-T2-E1

        Mfr.#: SI8802DB-T2-E1

        OMO.#: OMO-SI8802DB-T2-E1-VISHAY

        		 MOSFET N-CH 8V MICROFOOT
        SI8802DB-T2-EY

        Mfr.#: SI8802DB-T2-EY

        OMO.#: OMO-SI8802DB-T2-EY-1190

        		 全新原裝
        SI8802DBT2E1

        Mfr.#: SI8802DBT2E1

        OMO.#: OMO-SI8802DBT2E1-1190

        		 Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        可用性
        庫存:
        Available
        訂購:
        4000
        輸入數量:
        SI8802DB-T2-E1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$0.17
        US$0.17
        10
        US$0.16
        US$1.60
        100
        US$0.15
        US$15.11
        500
        US$0.14
        US$71.35
        1000
        US$0.13
        US$134.30
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