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IKP06N60TXKSA1

IKP06N60TXKSA1
Mfr. #:
IKP06N60TXKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors LOW LOSS DuoPack 600V 6A
生命週期:
製造商新產品
數據表:
IKP06N60TXKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IKP06N60TXKSA1 DatasheetIKP06N60TXKSA1 Datasheet (P4-P6)IKP06N60TXKSA1 Datasheet (P7-P9)IKP06N60TXKSA1 Datasheet (P10-P12)IKP06N60TXKSA1 Datasheet (P13)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-220-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.5 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
12 A
Pd - 功耗：
88 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
止溝IGBT
打包：
管子
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
500
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IKP06N60T IKP6N6TXK SP000683056
Tags
IKP06N60T, IKP06, IKP0, IKP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IKP06N60T: 600V 12A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***nsix Microsemi
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 6A, TO-220; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; Current Ic Continuous a Max:6A; No. of Transistors:1; Package / Case:TO-220; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon SCT
The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IGP06N60T Series 600 V 12 A Through Hole Low Loss IGBT - PG-TO-220-3
***ineon SCT
Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***Yang
IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***-Wing Technology
STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins
***ical
Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***p One Stop
Trans IGBT Chip N-CH 600V 14.7A 35700mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA15N60T Series N-Channel 600 V 14.7 A IGBT in TRENCHSTOP™ - TO-220FP
***ineon SCT
600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;
***nell
IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***el Electronic
STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***ure Electronics
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
型號 製造商 描述 庫存 價格
IKP06N60TXKSA1
DISTI # V99:2348_06383931		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		414
  • 2500:$0.8650
  • 1000:$0.8735
  • 500:$1.0643
  • 100:$1.2205
  • 10:$1.5451
  • 1:$2.0079
IKP06N60TXKSA1
DISTI # V36:1790_06383931		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		0
  • 500000:$0.7611
  • 250000:$0.7631
  • 50000:$0.8990
  • 5000:$1.1180
  • 500:$1.1540
IKP06N60TXKSA1
DISTI # IKP06N60TXKSA1-ND		Infineon Technologies AGIGBT 600V 12A 88W TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.1540
IKP06N60TXKSA1
DISTI # 30177240		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		490
  • 14:$0.7412
IKP06N60TXKSA1
DISTI # 26197718		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		414
  • 8:$2.0079
IKP06N60TXK
DISTI # IKP06N60TXKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IKP06N60TXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$0.7969
  • 3000:$0.8119
  • 2000:$0.8399
  • 1000:$0.8719
  • 500:$0.9039
IKP06N60TXKSA1
DISTI # 726-IKP06N60TXKSA1		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 600V 6A
RoHS: Compliant		998
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9110
  • 2500:$0.8480
  • 5000:$0.8170
  • 10000:$0.7850
IKP06N60T
DISTI # 726-IKP06N60T		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 600V 6A
RoHS: Compliant		360
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9110
  • 2500:$0.8480
  • 5000:$0.8170
  • 10000:$0.7850
IKP06N60TXKSA1
DISTI # 1107169		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 600V 6A TO220, PK190
  • 500:£0.6590
  • 200:£0.7040
  • 100:£0.7500
  • 20:£0.8590
  • 10:£1.0390
IKP06N60TXKSA1
DISTI # 1107169P		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 600V 6A TO220, TU560
  • 500:£0.6590
  • 200:£0.7040
  • 100:£0.7500
  • 20:£0.8590
IKP06N60TXKSA1
DISTI # XSKDRABV0052156		Infineon Technologies AG 
RoHS: Compliant		16500 in Stock0 on Order
  • 16500:$1.0400
  • 500:$1.1100
圖片 型號 描述
FDV301N

Mfr.#: FDV301N

OMO.#: OMO-FDV301N

 MOSFET N-Ch Digital
STP11NK40ZFP

Mfr.#: STP11NK40ZFP

OMO.#: OMO-STP11NK40ZFP

 MOSFET N-Ch, 400V-0.49ohms Zener SuperMESH 9A
IRL540NSTRLPBF

Mfr.#: IRL540NSTRLPBF

OMO.#: OMO-IRL540NSTRLPBF

 MOSFET MOSFT 100V 36A 44mOhm 49.3nC LogLvl
ERJ-3GEYJ331V

Mfr.#: ERJ-3GEYJ331V

OMO.#: OMO-ERJ-3GEYJ331V

 Thick Film Resistors - SMD 0603 330ohms 5% AEC-Q200
ERJ-3GEY0R00V

Mfr.#: ERJ-3GEY0R00V

OMO.#: OMO-ERJ-3GEY0R00V

 Thick Film Resistors - SMD 0603 Zero Ohms
WSL2010R5000FEA18

Mfr.#: WSL2010R5000FEA18

OMO.#: OMO-WSL2010R5000FEA18-VISHAY-DALE

 Current Sense Resistors - SMD 1watt .5ohms 1%
STP11NK40ZFP

Mfr.#: STP11NK40ZFP

OMO.#: OMO-STP11NK40ZFP-STMICROELECTRONICS

 MOSFET N-CH 400V 9A TO-220FP
DS18B20+PAR

Mfr.#: DS18B20+PAR

OMO.#: OMO-DS18B20-PAR-MAXIM-INTEGRATED

 Board Mount Temperature Sensors Prgmble Resolution 1-Wire Parasite Pw
ERJ-3EKF2001V

Mfr.#: ERJ-3EKF2001V

OMO.#: OMO-ERJ-3EKF2001V-PANASONIC

 Thick Film Resistors - SMD 0603 2Kohms 1% Tol
ERJ-3GEY0R00V

Mfr.#: ERJ-3GEY0R00V

OMO.#: OMO-ERJ-3GEY0R00V-PANASONIC

 Thick Film Resistors - SMD 0603 Zero Ohms
可用性
庫存:
988
訂購:
2971
輸入數量:
IKP06N60TXKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.84
US$1.84
10
US$1.57
US$15.70
100
US$1.25
US$125.00
500
US$1.10
US$550.00
1000
US$0.91
US$911.00
2500
US$0.85
US$2 120.00
5000
US$0.82
US$4 085.00
10000
US$0.78
US$7 850.00
從...開始
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