IPL60R085P7AUMA1

Mfr. #:: IPL60R085P7AUMA1
製造商:: Infineon Technologies
描述:: MOSFET HIGH POWER_NEW
生命週期:: 製造商新產品
數據表:: IPL60R085P7AUMA1 數據表
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ECAD Model:
更多信息:: IPL60R085P7AUMA1 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: VSON-4

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 39 A

Rds On - 漏源電阻：: 73 mOhms

Vgs th - 柵源閾值電壓：: 3 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 51 nC

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

Pd - 功耗：: 154 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

系列：: CoolMOS P7

晶體管類型：: 1 N-Channel

品牌：: 英飛凌科技

秋季時間：: 7 ns

產品類別：: MOSFET

上升時間：: 7 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 70 ns

典型的開啟延遲時間：: 15 ns

第 # 部分別名：: IPL60R085P7 SP001657404

Tags: IPL60R0, IPL60, IPL6, IPL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPL60R085P7AUMA1 描述

***ure Electronics: Single N-Channel 600 V 85 mOhm 51 nC CoolMOS Power Mosfet - VSON-4

***ark: Mosfet, N-Ch, 600V, 39A, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes

***ineon: The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

IPL60R085P7AUMA1 更多信息

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

型號	製造商	描述	庫存	價格
IPL60R085P7AUMA1 DISTI # V72:2272_18787583	Infineon Technologies AG	HIGH POWER_NEW	9000	6000:$3.1220 3000:$3.1360 1000:$3.2350 500:$3.8160 250:$4.2420 100:$4.4530 25:$5.0650 10:$5.0740 1:$5.8720
IPL60R085P7AUMA1 DISTI # IPL60R085P7AUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2943In Stock	1000:$3.8204 500:$4.5299 100:$5.5941 10:$6.8220 1:$7.6400
IPL60R085P7AUMA1 DISTI # IPL60R085P7AUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2943In Stock	1000:$3.8204 500:$4.5299 100:$5.5941 10:$6.8220 1:$7.6400
IPL60R085P7AUMA1 DISTI # IPL60R085P7AUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$3.5236
IPL60R085P7AUMA1 DISTI # 32625956	Infineon Technologies AG	HIGH POWER_NEW	9000	6000:$3.3561 3000:$3.3712 1000:$3.4776 500:$4.1022 250:$4.5602 100:$4.7870 25:$5.4449 10:$5.4546 3:$6.3124
IPL60R085P7AUMA1 DISTI # 32670171	Infineon Technologies AG	HIGH POWER_NEW	3000	3000:$3.0720
IPL60R085P7AUMA1 DISTI # 32658241	Infineon Technologies AG	HIGH POWER_NEW	3000	3000:$4.3200
IPL60R085P7AUMA1 DISTI # IPL60R085P7AUMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPL60R085P7AUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$3.3900 6000:$3.2900 12000:$3.1900 18000:$3.0900 30000:$2.9900
IPL60R085P7AUMA1 DISTI # SP001657404	Infineon Technologies AG	HIGH POWER_NEW (Alt: SP001657404) RoHS: Compliant Min Qty: 3000	Europe - 0	3000:€3.2900 6000:€3.1900 12000:€2.9900 18000:€2.7900 30000:€2.5900
IPL60R085P7AUMA1 DISTI # 49AC8001	Infineon Technologies AG	MOSFET, N-CH, 600V, 39A, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes	224	1000:$3.3700 500:$3.9900 250:$4.4500 100:$4.6900 50:$4.9300 25:$5.1700 10:$5.4100 1:$6.3700
IPL60R085P7AUMA1	Infineon Technologies AG	Single N-Channel 600 V 85 mOhm 51 nC CoolMOS Power Mosfet - VSON-4 RoHS: Not Compliant	3000Reel	3000:$3.0900
IPL60R085P7AUMA1 DISTI # 726-IPL60R085P7AUMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	3000	1:$6.3700 10:$5.4100 100:$4.6900 250:$4.4500 500:$3.9900 1000:$3.3700 3000:$3.2000
IPL60R085P7AUMA1 DISTI # 2841637	Infineon Technologies AG	MOSFET, N-CH, 600V, 39A, VSON RoHS: Compliant	234	500:£3.1300 250:£3.5000 100:£3.6900 10:£4.2400 1:£5.5100
IPL60R085P7AUMA1 DISTI # 2841637	Infineon Technologies AG	MOSFET, N-CH, 600V, 39A, VSON RoHS: Compliant	224	1000:$5.1300 500:$5.4000 250:$5.6900 100:$6.0200 10:$6.8100 1:$7.2800
IPL60R085P7AUMA1 DISTI # XSFP00000173189	Infineon Technologies AG	RoHS: Compliant	9000 in Stock0 on Order	9000:$3.4300 3000:$3.6400

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