A3T21H360W23SR6

A3T21H360W23SR6
Mfr. #:
A3T21H360W23SR6
製造商:
NXP Semiconductors
描述:
AIRFAST RF POWER LDMOS TRANSISTO
生命週期:
製造商新產品
數據表:
A3T21H360W23SR6 數據表
交貨:
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ECAD Model:
更多信息:
A3T21H360W23SR6 更多信息 A3T21H360W23SR6 Product Details
產品屬性
屬性值
Tags
A3T21, A3T2, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
型號 製造商 描述 庫存 價格
A3T21H360W23SR6
DISTI # V36:1790_18998405
NXP SemiconductorsRF POWER TRANSISTOR0
  • 150000:$86.5700
  • 75000:$86.5800
  • 15000:$89.1500
  • 1500:$95.5300
  • 150:$96.7200
A3T21H360W23SR6
DISTI # A3T21H360W23SR6-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$96.7176
A3T21H360W23SR6
DISTI # A3T21H360W23SR6
Avnet, Inc.RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 28 V 600 mA 56 W 4-Pin ACP-1230S T/R - Tape and Reel (Alt: A3T21H360W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 1500:$92.4900
  • 900:$94.2900
  • 600:$97.7900
  • 300:$101.7900
  • 150:$105.9900
A3T21H360W23SR6
DISTI # 771-A3T21H360W23SR6
NXP SemiconductorsRF MOSFET Transistors A3T21H360W23S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant
0
  • 1:$116.3600
  • 5:$114.2200
  • 10:$109.0800
  • 25:$105.4400
  • 100:$98.1800
  • 150:$89.9700
A3T21H360W23SR6
DISTI # A3T21H360W23SR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 150:$109.0800
圖片 型號 描述
A3T21H360W23SR6

Mfr.#: A3T21H360W23SR6

OMO.#: OMO-A3T21H360W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
A3T21H360W23S

Mfr.#: A3T21H360W23S

OMO.#: OMO-A3T21H360W23S-1190

全新原裝
A3T21H360W23SR6

Mfr.#: A3T21H360W23SR6

OMO.#: OMO-A3T21H360W23SR6-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
可用性
庫存:
Available
訂購:
3000
輸入數量:
A3T21H360W23SR6的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$134.96
US$134.96
10
US$128.21
US$1 282.07
100
US$121.46
US$12 145.95
500
US$114.71
US$57 355.90
1000
US$107.96
US$107 964.00
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