NST65010MW6T1G

Mfr. #:: NST65010MW6T1G
製造商:: ON Semiconductor
描述:: Bipolar Transistors - BJT Dual Matched PNP Tra
生命週期:: 製造商新產品
數據表:: NST65010MW6T1G 數據表
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HTML Datasheet:: NST65010MW6T1G Datasheet NST65010MW6T1G Datasheet (P4-P5)
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更多信息:: NST65010MW6T1G 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 雙極晶體管 - BJT

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: SOT-363-6

晶體管極性：: PNP

配置：: 雙重的

集電極-發射極電壓 VCEO 最大值：: - 65 V

集電極-基極電壓 VCBO：: - 80 V

發射極基極電壓 VEBO：: - 5 V

集電極-發射極飽和電壓：: - 300 mV

最大直流集電極電流：: - 100 mA

增益帶寬積 fT：: 100 MHz

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

打包：: 捲軸

品牌：: 安森美半導體

Pd - 功耗：: 380 mW

產品類別：: BJT - 雙極晶體管

出廠包裝數量：: 3000

子類別：: 晶體管

單位重量：: 0.000265 oz

Tags: NST

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NST65010MW6T1G 評級和評論

S***n

Teşekkürler

2019-05-17

V***n

Capacity fully match, packed in good zip package, shipping long

2019-05-09

N***o

good.

2019-07-12

I***h

Not tracked, although chose paid delivery with track. In general, they work. It was exactly a month.

2019-02-13

NST65010MW6T1G 描述

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

***Yang: Trans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R - Tape and Reel

***ment14 APAC: Transistor, DUAL PNP, -65V, SOT-363-6; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:380mW; DC

***ark: Trans, Dual Pnp, -65V, Sot-363-6; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:65V; Continuous Collector Current Npn:-; Continuous Collector Current Pnp:100Ma; No. Of Pins:6Pinsrohs Compliant: Yes

***nell: TRANS, DUAL PNP, -65V, SOT-363-6; Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: -65V; Power Dissipation Pd: 380mW; DC Collector Current: -100mA; DC Current Gain hFE: 0.9hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

*** Source Electronics: Trans GP BJT PNP 65V 0.1A 200mW 6-Pin SOT-363 T/R / TRANS 2PNP 65V 0.1A SOT363

***ure Electronics: BC856AS Series 65 V 100 mA Dual PNP SMT Small Signal Transistor - SOT-363

***ark: Bipolar Array, Dual Pnp, 65V/0.1A/sot363 Rohs Compliant: Yes

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ponent Stockers USA: 100 mA 65 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR

***Yang: BJT,NPN/PNP,dual,65V,100mA,TSSOP6, RL

***ment14 APAC: TRANSISTOR, NPN, 65V, 100MA, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (19-Dec-2012)

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

***-Wing Technology: Cut Tape (CT) Surface Mount 2PNP (Dual) 6 Bipolar (BJT) Transistor Array 220 @ 2mA 5V 15nA ICBO 380mW 100MHz

***p One Stop Global: Trans GP BJT PNP 65V 0.1A 380mW Automotive 6-Pin SOT-363 T/R

***nell: TRANS, DUAL PNP, -65V, SOT-363; Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: -65V; Power Dissipation Pd: 380mW; DC Collector Current: -100mA; DC Current Gain hFE: 0.9hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***p One Stop: Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: UMD2N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-88

***ark: Digital Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:22Kohm; Resistor Ratio, R1 / R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD2N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 56hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 56; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ical: Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R

***ure Electronics: UMD12N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-88

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ark: Digital Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD12N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 68hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 68; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

***ical: Trans Digital BJT PNP 50V 100mA 150mW 6-Pin UMT T/R

***ure Electronics: UMB2N Series 50 V 100 mA Surface mount Dual PNP Digital Transistor SC-88

***ark: Digital Transistor Polarity:dual Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:-100Ma; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:-; No. Of Pins:6 Pin Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMB2N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 68hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 68; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

NST65010MW6T1G 更多信息

NST650 Dual-Matched PNP Transistors: ON Semiconductor NST650 Dual-Matched PNP Transistors are available in SOT-363 ultra-small packages and are ideal for portable products. The transistors are designed to offer a pair of highly matched devices in all parameters. This design eliminates the need for costly trimming.

Market price

型號	製造商	描述	庫存	價格
NST65010MW6T1G DISTI # V72:2272_14070779	ON Semiconductor	Trans GP BJT PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R	9412	6000:$0.0630 3000:$0.0684 1000:$0.0859 500:$0.0954 250:$0.1060 100:$0.1178 25:$0.2718 10:$0.3020 1:$0.4702
NST65010MW6T1G DISTI # V36:1790_14070779	ON Semiconductor	Trans GP BJT PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R	0	9000000:$0.0466 4500000:$0.0467 900000:$0.0571 90000:$0.0799 9000:$0.0840
NST65010MW6T1G DISTI # NST65010MW6T1GOSCT-ND	ON Semiconductor	TRANS 2PNP 65V 0.1A SC88-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8514In Stock	1000:$0.0995 500:$0.1298 100:$0.1960 10:$0.3460 1:$0.4700
NST65010MW6T1G DISTI # NST65010MW6T1GOSDKR-ND	ON Semiconductor	TRANS 2PNP 65V 0.1A SC88-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8514In Stock	1000:$0.0995 500:$0.1298 100:$0.1960 10:$0.3460 1:$0.4700
NST65010MW6T1G DISTI # NST65010MW6T1GOSTR-ND	ON Semiconductor	TRANS 2PNP 65V 0.1A SC88-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	75000:$0.0560 30000:$0.0630 15000:$0.0672 6000:$0.0756 3000:$0.0840
NST65010MW6T1G DISTI # 25924066	ON Semiconductor	Trans GP BJT PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R	9412	126:$0.4702
NST65010MW6T1G DISTI # 30609830	ON Semiconductor	Trans GP BJT PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R	310	43:$0.5850
NST65010MW6T1G DISTI # NST65010MW6T1G	ON Semiconductor	Trans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: NST65010MW6T1G) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	90000:$0.0494 45000:$0.0506 27000:$0.0513 18000:$0.0520 9000:$0.0523
NST65010MW6T1G DISTI # NST65010MW6T1G	ON Semiconductor	Trans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R (Alt: NST65010MW6T1G) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0507 18000:€0.0546 12000:€0.0645 6000:€0.0789 3000:€0.1014
NST65010MW6T1G DISTI # 68Y0578	ON Semiconductor	DUAL MATCHED PNP XSTR 65V / REEL	0	9000:$0.0680 3000:$0.0760 1000:$0.0960 500:$0.1170 250:$0.1210 100:$0.1240 50:$0.2840 1:$0.5030
NST65010MW6T1G DISTI # 75Y1885	ON Semiconductor	TRANS, DUAL PNP, -65V, SOT-363-6,Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:-65V,Power Dissipation Pd:380mW,DC Collector Current:-100mA,DC Current Gain hFE:0.9hFE,Transistor Case Style:SOT-363,No. of RoHS Compliant: Yes	2950	1000:$0.0960 500:$0.1060 250:$0.1150 100:$0.1250 50:$0.1810 25:$0.2360 10:$0.2920 1:$0.4550
NST65010MW6T1G DISTI # 863-NST65010MW6T1G	ON Semiconductor	Bipolar Transistors - BJT Dual Matched PNP Tra RoHS: Compliant	19183	1:$0.4500 10:$0.2890 100:$0.1240 1000:$0.0950 3000:$0.0720 9000:$0.0640 24000:$0.0600
NST65010MW6T1G DISTI # 9209887P	ON Semiconductor	BJT PNP MATCHED PAIR 65V 0.1A SOT-363, RL	2700	5000:£0.0540 2500:£0.0630 1000:£0.0680 500:£0.0820
NST65010MW6T1G DISTI # 2508355	ON Semiconductor	TRANS, DUAL PNP, -65V, SOT-363-6	3110	500:£0.0760 250:£0.0959 100:£0.1010 25:£0.2460 5:£0.2560
NST65010MW6T1G DISTI # 2508355	ON Semiconductor	TRANS, DUAL PNP, -65V, SOT-363-6 RoHS: Compliant	2940	24000:$0.0900 9000:$0.0960 3000:$0.1090 1000:$0.1430 100:$0.1870 10:$0.4360 1:$0.6780
NST65010MW6T1G DISTI # 2508355RL	ON Semiconductor	TRANS, DUAL PNP, -65V, SOT-363-6 RoHS: Compliant	0	24000:$0.0900 9000:$0.0960 3000:$0.1090 1000:$0.1430 100:$0.1870 10:$0.4360 1:$0.6780
NST65010MW6T1G	ON Semiconductor	PNP Dual General Purpose Transistors	1400	1:$0.1000 100:$0.0800 500:$0.0700 1000:$0.0600

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