IS25WP512M-RMLE

Mfr. #:: IS25WP512M-RMLE
製造商:: ISSI
描述:: NOR Flash 512Mb 1.8V 80/133Mhz Serial NOR Flash
生命週期:: 製造商新產品
數據表:: IS25WP512M-RMLE 數據表
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更多信息:: IS25WP512M-RMLE 更多信息

產品屬性
屬性值

製造商：: 國際空間站

產品分類：: NOR閃存

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: SOIC-16

系列：: IS25WP512M

內存大小：: 512 Mbit

最大時鐘頻率：: 133 MHz

接口類型：: SPI

組織：: 64 M x 8

計時類型：: 同步

數據總線寬度：: 8 bit

電源電壓 - 最小值：: 1.65 V

電源電壓 - 最大值：: 1.95 V

電源電流 - 最大值：: 17 mA

最低工作溫度：: - 40 C

最高工作溫度：: + 105 C

打包：: 管子

品牌：: 國際空間站

濕氣敏感：: 是的

產品類別：: NOR閃存

出廠包裝數量：: 44

子類別：: 內存和數據存儲

Tags: IS25WP512M-R, IS25WP5, IS25WP, IS25W, IS25, IS2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS25WP512M-RMLE 更多信息

SPI NOR Flash ICs: ISSI SPI NOR Flash ICs are low voltage Serial Peripheral Interface NOR Flash Memory Devices offering features such as Double Data Rate (DTR/DDR) interface modes, SFDP support, and 2 cycle instruction input (QPI mode).

IS25WP512M & IS25LP512M Serial NOR Flash: ISSI IS25WP512M & IS25LP512M Serial NOR Flash is a versatile storage solution with high flexibility and performance in a simplified pin count package. The device is for systems that require limited space, a low pin count, and low power consumption. It is accessed through a 4-wire SPI Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which can also be configured to serve as multi-I/O. The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4) which equates to 66.5Mbytes/s of data throughput. The memory array is organized into programmable pages of 256/512 bytes.

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