MRF1513NT1

Mfr. #:: MRF1513NT1
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors RF LDMOS FET PLD1.5
生命週期:: 製造商新產品
數據表:: MRF1513NT1 數據表
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ECAD Model:
更多信息:: MRF1513NT1 更多信息

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: E

晶體管極性：: N通道

技術：: 矽

Id - 連續漏極電流：: 2 A

Vds - 漏源擊穿電壓：: 40 V

獲得：: 15 dB

輸出功率：: 3 W

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: PLD-1.5

打包：: 捲軸

配置：: 單身的

高度：: 1.83 mm

長度：: 6.73 mm

工作頻率：: 520 MHz

系列：: MRF1513NT1

類型：: 射頻功率MOSFET

寬度：: 5.97 mm

品牌：: 恩智浦/飛思卡爾

頻道模式：: 增強

濕氣敏感：: 是的

Pd - 功耗：: 31.25 W

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 1000

子類別：: MOSFET

Vgs - 柵源電壓：: 20 V

Vgs th - 柵源閾值電壓：: 1.7 V

第 # 部分別名：: 935317216515

單位重量：: 0.009877 oz

Tags: MRF1513, MRF151, MRF15, MRF1, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF1513NT1 評級和評論

P***k

Shawls are very small, there is a numbering of holes as in the chess board, came quickly, the track was tracked

2019-06-29

P***e

I never received my package after 3 months of waiting. I believe it's not their fault but they should choose a better carrier. They refunded me without too much trouble.

2019-06-18

MRF1513NT1 描述

***ark: Lateral N-Channel Broadband Rf Power Mosfet, 520 Mhz, 3 W, 12.5 V

***W: RF Power Transistor, 0.135 to 0.52 GHz, 3 W, Typ Gain in dB is 15 @ 520 MHz, 12.5 V, SOT1811-1, LDMOS

*** Stop Electro: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N, RF, PLD-1.5; Transistor Type:RF MOSFET; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:31.25W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain:15dB; Output Power:3W; Package / Case:PLD-1.5; Power Dissipation Max:31.25W; Power Dissipation Pd:31.25W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:650mV

***ark: Rf Fet Transistor, 40 V, 2.5 A, 31.7 W, 1 Ghz, Powerso-10Rf Rohs Compliant: Yes

***ure Electronics: PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF

***p One Stop: Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube

***icroelectronics: 3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

***roFlash: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***nell: MOSFET, RF, N-CH, 40V, 2.5A, POWERSO; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF;

***p One Stop Global: Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube

***icroelectronics: 3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***icroelectronics: 3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package

***ical: Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R

***icroelectronics SCT: RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

*** Stop Electro: RF Power Field-Effect Transistors

***ser: RF Integrated Circuits POWER R.F.

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS

*** Source Electronics: Trans MOSFET P-CH 30V 2.3A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 2.3A SOT-23-3

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.25 W

***ure Electronics: Single P-Channel 30 V 165 mOhm 2 nC HEXFET® Power Mosfet - MICRO-3

***ark: P Channel, MOSFET, -30V, -2.3 A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.3V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***et Japan: Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 0.4 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Leaded Process Compatible:Yes RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -2.3 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 20 / Fall Time ns = 6.9 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

***itex: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23

***Yang: Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***ure Electronics: Single N-Channel 30 V 57 mOhm 1.5 nC OptiMOS Small Signal Mosfet - SOT-23

***p One Stop: Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, N CH, 30V, 2.3A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:30V; On Resistance

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.3 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 93 / Gate-Source Voltage V = 20 / Fall Time ns = 1.4 / Rise Time ns = 2.3 / Turn-OFF Delay Time ns = 8.3 / Turn-ON Delay Time ns = 4.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500

MRF1513NT1 更多信息

MRF15xx Lateral N-Ch Broadband RF Power MOSFETs: NXP MRF15xx Lateral N-Channel Broadband RF Power MOSFETs are designed for broadband commercial and industrial applications with frequencies of 175 MHz or 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 7.5 volt or 12.5 volt portable FM equipment.Learn More

Market price

型號	製造商	描述	庫存	價格
MRF1513NT1 DISTI # V72:2272_07204011	NXP Semiconductors	Trans RF MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R	564	500:$5.8240 250:$7.2820 100:$7.5770 25:$8.1910 10:$9.2270 1:$10.2449
MRF1513NT1 DISTI # MRF1513NT1CT-ND	NXP Semiconductors	FET RF 40V 520MHZ PLD-1.5 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3037In Stock	500:$6.9497 100:$7.9810 10:$9.6400 1:$10.6700
MRF1513NT1 DISTI # MRF1513NT1DKR-ND	NXP Semiconductors	FET RF 40V 520MHZ PLD-1.5 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3037In Stock	500:$6.9497 100:$7.9810 10:$9.6400 1:$10.6700
MRF1513NT1 DISTI # MRF1513NT1TR-ND	NXP Semiconductors	FET RF 40V 520MHZ PLD-1.5 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	1000:$5.8767
MRF1513NT1 DISTI # 30701152	NXP Semiconductors	Trans RF MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R	1000	1000:$5.5425
MRF1513NT1 DISTI # 27104363	NXP Semiconductors	Trans RF MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R	564	500:$5.8600 250:$7.2860 100:$7.5810 25:$8.1969 10:$9.2350 2:$10.2570
MRF1513NT1 DISTI # 30614723	NXP Semiconductors	Trans RF MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R	500	200:$9.2055 100:$9.5497 50:$10.3148 10:$11.7427 2:$13.0050
MRF1513NT1 DISTI # MRF1513NT1	NXP Semiconductors	Trans MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R - Tape and Reel (Alt: MRF1513NT1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 5000	1000:$5.6900 2000:$5.4900 4000:$5.4900 6000:$5.4900 10000:$5.4900
MRF1513NT1 DISTI # MRF1513NT1	NXP Semiconductors	Trans MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R (Alt: MRF1513NT1) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	1000:$6.2187 2000:$6.0460 3000:$5.8826 5000:$5.7278 10000:$5.6534 25000:$5.5809 50000:$5.4414
MRF1513NT1 DISTI # MRF1513NT1	NXP Semiconductors	Trans MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R (Alt: MRF1513NT1) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1:€7.8545 10:€6.4055 25:€6.0375 50:€5.9800 100:€5.5200
MRF1513NT1 DISTI # 22M5787	NXP Semiconductors	RF MOSFET, N CHANNEL, 40V, 466-03, FULL REEL,Drain Source Voltage Vds:40V,Continuous Drain Current Id:2A,Power Dissipation Pd:31.25W,Operating Frequency Min:450MHz,Operating Frequency Max:520MHz,RF Transistor Case:PLD-1.5 RoHS Compliant: Yes	0	1:$8.4900 10:$8.1500 25:$7.6700 100:$4.9900 1000:$4.8000
MRF1513NT1 DISTI # 98M1652	NXP Semiconductors	RF FET Transistor, 40 V, 2 A, 31.25 W, 450 MHz, 520 MHz, PLD-1.5 RoHS Compliant: Yes	1148	1:$10.6700 10:$9.6400 25:$8.4100 50:$8.2000 100:$7.9900 250:$7.6200 500:$6.9500
MRF1513NT1 DISTI # 841-MRF1513NT1	NXP Semiconductors	RF MOSFET Transistors RF LDMOS FET PLD1.5 RoHS: Compliant	982	1:$10.6700 10:$9.6400 25:$8.4100 100:$7.9900 250:$7.6200 500:$6.9500 1000:$5.8800
MRF1513NT1 DISTI # MRF1513NT1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	1359	1000:$6.3400
MRF1513NT1 DISTI # 1577894	NXP Semiconductors	MOSFET, N, RF, PLD-1.5 RoHS: Compliant	1148	1:$16.8900 10:$15.2600 25:$13.3100 100:$12.6500 250:$12.0600 500:$11.0000 1000:$9.3100 2000:$8.9600
MRF1513NT1 DISTI # C1S233100231986	NXP Semiconductors	Trans RF MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R RoHS: Compliant	564	250:$7.2860 100:$7.5810 25:$8.1969 10:$9.2350 1:$10.2570
MRF1513NT1 DISTI # C1S537101386037	NXP Semiconductors	Trans RF MOSFET N-CH 40V 2A 3-Pin PLD-1.5 T/R RoHS: Compliant	500	500:$5.3900 200:$5.4200 100:$5.6200 50:$6.1600 10:$6.9900 1:$10.1000
MRF1513NT1 DISTI # 1577894	NXP Semiconductors	MOSFET, N, RF, PLD-1.5 RoHS: Compliant	1148	1:£8.6800 5:£8.1000 10:£6.5800 50:£6.3200 100:£6.0600

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