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CSD19536KTTT

CSD19536KTTT
Mfr. #:
CSD19536KTTT
描述:
MOSFET 100V N-Channel NexFET Power MOSFET
生命週期:
製造商新產品
數據表:
CSD19536KTTT 數據表
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ECAD Model:
更多信息:
CSD19536KTTT 更多信息 CSD19536KTTT Product Details
產品屬性
屬性值
製造商：
德州儀器
產品分類：
MOSFET
RoHS：
E
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
272 A
Rds On - 漏源電阻：
2.4 mOhms
Vgs th - 柵源閾值電壓：
2.1 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
118 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
375 W
配置：
單身的
頻道模式：
增強
商品名：
場效應管
打包：
捲軸
高度：
4.7 mm
長度：
9.25 mm
系列：
CSD19536KTT
晶體管類型：
1 N-Channel
寬度：
10.26 mm
品牌：
德州儀器
正向跨導 - 最小值：
329 S
秋季時間：
6 ns
濕氣敏感：
是的
產品類別：
MOSFET
上升時間：
8 ns
出廠包裝數量：
50
子類別：
MOSFET
典型關斷延遲時間：
32 ns
典型的開啟延遲時間：
13 ns
單位重量：
0.068654 oz
Tags
CSD19536K, CSD19536, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 3-DDPAK/TO-263 -55 to 175
***ical
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R
*** Stop Electro
Power Field-Effect Transistor, 200A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***AS INSTRUMENTS INC
This 100-V, 2-mΩ, D2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型號 描述 庫存 價格
CSD19536KTTT
DISTI # 296-41136-1-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3034In Stock
  • 10:$5.3960
  • 1:$6.0400
CSD19536KTTT
DISTI # 296-41136-6-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3034In Stock
  • 10:$5.3960
  • 1:$6.0400
CSD19536KTTT
DISTI # 296-41136-2-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		3000In Stock
  • 250:$3.8767
  • 100:$4.2958
  • 50:$4.7148
CSD19536KTTT
DISTI # CSD19536KTTT		Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R (Alt: CSD19536KTTT)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel		Asia - 0
    CSD19536KTTT
    DISTI # CSD19536KTTT    		Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19536KTTT)
    RoHS: Compliant
    Min Qty: 150
    Container: Reel    		Americas - 0
    • 150:$2.6900
    • 250:$2.5900
    • 400:$2.4900
    • 750:$2.3900
    • 1500:$2.2900
    CSD19536KTTTCSD19536KTT 100 V N-Channel NexFET&#153,Power MOSFET3414
    • 1000:$2.1700
    • 750:$2.2100
    • 500:$2.5500
    • 250:$2.9300
    • 100:$3.1400
    • 25:$3.5100
    • 10:$3.7500
    • 1:$4.1700
    CSD19536KTTT
    DISTI # 595-CSD19536KTTT    		MOSFET 100V N-Channel NexFET Power MOSFET
    RoHS: Compliant    		1708
    • 1:$5.0400
    • 10:$4.5300
    • 50:$4.5300
    • 100:$3.7100
    • 250:$3.4800
    • 500:$3.1600
    CSD19536KTT
    DISTI # 595-CSD19536KTT    		MOSFET CSD19536KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263
    RoHS: Compliant    		60
    • 1:$4.4800
    • 10:$4.0300
    • 100:$3.3000
    • 250:$3.0900
    • 500:$2.8100
    CSD19536KTTT
    DISTI # 9009857P    		NEXFET N-CHANNEL MOSFET 100V 190A TO220, RL256
    • 10:£3.3000
    • 25:£3.1600
    • 50:£3.0300
    圖片 型號 描述
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    MURS360T3G

    Mfr.#: MURS360T3G

    OMO.#: OMO-MURS360T3G

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    Mfr.#: FDN342P

    OMO.#: OMO-FDN342P

    		 MOSFET SSOT-3 P-CH -20V
    1734035-1

    Mfr.#: 1734035-1

    OMO.#: OMO-1734035-1-TE-CONNECTIVITY

    		 CONN RCPT USB2.0 MINI B SMD R/A
    BLM18PG221SN1D

    Mfr.#: BLM18PG221SN1D

    OMO.#: OMO-BLM18PG221SN1D-MURATA-ELECTRONICS

    		 EMI Filter Beads, Chips & Arrays 220ohms
    SN65HVD1781AQDRQ1

    Mfr.#: SN65HVD1781AQDRQ1

    OMO.#: OMO-SN65HVD1781AQDRQ1-TEXAS-INSTRUMENTS

    		 FAULT PROTECTED RS 485TRANSCEIVE
    ABMM2-8.000MHZ-E2-T

    Mfr.#: ABMM2-8.000MHZ-E2-T

    OMO.#: OMO-ABMM2-8-000MHZ-E2-T-ABRACON

    		 Crystals 8MHz
    MURS360T3G

    Mfr.#: MURS360T3G

    OMO.#: OMO-MURS360T3G-ON-SEMICONDUCTOR

    		 Rectifiers 600V 3A Ultrafast
    FDN342P

    Mfr.#: FDN342P

    OMO.#: OMO-FDN342P-ON-SEMICONDUCTOR

    		 全新原裝
    C1210C105M1RAC

    Mfr.#: C1210C105M1RAC

    OMO.#: OMO-C1210C105M1RAC-1190

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 1uF X7R 1210 20%
    可用性
    庫存:
    Available
    訂購:
    1984
    輸入數量:
    CSD19536KTTT的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$5.60
    US$5.60
    10
    US$5.04
    US$50.40
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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