RFD4N06L

RFD4N06L
Mfr. #:
RFD4N06L
製造商:
Rochester Electronics, LLC
描述:
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
生命週期:
製造商新產品
數據表:
RFD4N06L 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
Tags
RFD4N, RFD4, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型號 製造商 描述 庫存 價格
RFD4N06LSM9A
DISTI # RFD4N06LSM9A-ND
ON SemiconductorMOSFET N-CH 60V 4A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    RFD4N06LSM9A
    DISTI # 512-RFD4N06LSM9A
    ON SemiconductorMOSFET 60V Single
    RoHS: Compliant
    0
      RFD4N06LSM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant
      67132
      • 1000:$0.5100
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      RFD4N06LHarris SemiconductorPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      1424
      • 1000:$0.2800
      • 500:$0.2900
      • 100:$0.3000
      • 25:$0.3200
      • 1:$0.3400
      RFD4N06LHARTING Technology GroupPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      975
        RFD4N06LSM9AS2457Fairchild Semiconductor Corporation 
        RoHS: Compliant
        38489
          圖片 型號 描述
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A

          MOSFET 60V Single
          RFD40N03

          Mfr.#: RFD40N03

          OMO.#: OMO-RFD40N03-1190

          全新原裝
          RFD43F-NF

          Mfr.#: RFD43F-NF

          OMO.#: OMO-RFD43F-NF-1190

          全新原裝
          RFD4N06L

          Mfr.#: RFD4N06L

          OMO.#: OMO-RFD4N06L-1190

          Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
          RFD4N06LSM

          Mfr.#: RFD4N06LSM

          OMO.#: OMO-RFD4N06LSM-1190

          全新原裝
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A-ON-SEMICONDUCTOR

          MOSFET N-CH 60V 4A DPAK
          RFD4N06LSM9AS2457

          Mfr.#: RFD4N06LSM9AS2457

          OMO.#: OMO-RFD4N06LSM9AS2457-1190

          全新原裝
          可用性
          庫存:
          Available
          訂購:
          2500
          輸入數量:
          RFD4N06L的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格(美元)
          數量
          單價
          小計金額
          1
          US$0.00
          US$0.00
          10
          US$0.00
          US$0.00
          100
          US$0.00
          US$0.00
          500
          US$0.00
          US$0.00
          1000
          US$0.00
          US$0.00
          從...開始
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