SPD02N50C3

Mfr. #:: SPD02N50C3
製造商:: Infineon Technologies
描述:: IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3
生命週期:: 製造商新產品
數據表:: SPD02N50C3 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

系列: CoolMOS C3

打包: 捲軸

部分別名: SP000313942 SPD02N50C3BTMA1 SPD02N50C3XT

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

商品名: 酷摩

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 25 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 15 ns

上升時間: 5 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 1.8 A

Vds-漏-源-擊穿電壓: 500 V

Rds-On-Drain-Source-Resistance: 3 Ohms

晶體管極性: N通道

典型關斷延遲時間: 70 ns

典型開啟延遲時間: 10 ns

通道模式: 增強

Tags: SPD02N5, SPD02N, SPD02, SPD0, SPD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPD02N50C3 描述

***ure Electronics: N-Channel 560 V 3 Ohm Cool MOS Power Transistor - PG-TO252-3

***ical: Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R

***p One Stop Global: Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 500V 1.8A 3-Pin TO-252 T/R

***ark: MOSFET, N CHANNEL, 560V, 1.8A, TO-252

***i-Key: LOW POWER_LEGACY

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***ment14 APAC: Prices include import duty and tax. MOSFET, N, 500V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:1.8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:5.4A; Termination Type:Surface Mount Device; Voltage Vds:500V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, 500V, D-PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:500V; Resistenza di Attivazione Rds(on):2.7ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:25W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:1.8A; Corrente di Impulso Idm:5.4A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds:500V; Tensione Vds Tipica:560V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale

Market price

型號	製造商	描述	庫存	價格
SPD02N50C3BTMA1 DISTI # V72:2272_06384768	Infineon Technologies AG	Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2200	75000:$0.4733 30000:$0.4735 15000:$0.4764 6000:$0.4829 3000:$0.4864 1000:$0.4950 500:$0.5222 250:$0.5928 100:$0.6469 50:$0.6936 25:$0.8102 10:$0.8295 1:$0.9367
SPD02N50C3 DISTI # SPD02N50C3INTR-ND	Infineon Technologies AG	MOSFET N-CH 560V 1.8A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N50C3BTMA1 DISTI # SPD02N50C3BTMA1-ND	Infineon Technologies AG	LOW POWER_LEGACY RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SPD02N50C3BTMA1 DISTI # 27619286	Infineon Technologies AG	Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2200	1000:$0.4950 500:$0.5222 250:$0.5928 100:$0.6469 50:$0.6936 25:$0.8102 16:$0.8295
SPD02N50C3 DISTI # 726-SPD02N50C3	Infineon Technologies AG	MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant	2200	1:$0.9700 10:$0.8270 100:$0.6350 500:$0.5610 1000:$0.4430 2500:$0.3930
SPD02N50C3BTMA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
SPD02N50C3	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	69500	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
SPD02N50C3BTMA1	Infineon Technologies AG	Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	160000	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
SPD02N50C3 DISTI # 1471785	Infineon Technologies AG	MOSFET, N, 500V, D-PAK RoHS: Compliant	0	1:$1.5400 10:$1.3200 100:$1.0100 500:$0.8880 1000:$0.7020 2500:$0.6320
SPD02N50C3 DISTI # 1471785RL	Infineon Technologies AG	MOSFET, N, 500V, D-PAK RoHS: Compliant	0	1:$1.5400 10:$1.3200 100:$1.0100 500:$0.8880 1000:$0.7020 2500:$0.6320

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