IPP60R330P6XKSA1

IPP60R330P6XKSA1
Mfr. #:
IPP60R330P6XKSA1
製造商:
Infineon Technologies
描述:
MOSFET LOW POWER_LEGACY
生命週期:
製造商新產品
數據表:
IPP60R330P6XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
12 A
Rds On - 漏源電阻:
297 mOhms
Vgs th - 柵源閾值電壓:
3.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
22 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
93 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
管子
高度:
15.65 mm
長度:
10 mm
系列:
CoolMOS P6
晶體管類型:
1 N-Channel
寬度:
4.4 mm
品牌:
英飛凌科技
秋季時間:
7 ns
產品類別:
MOSFET
上升時間:
7 ns
出廠包裝數量:
500
子類別:
MOSFET
典型關斷延遲時間:
33 ns
典型的開啟延遲時間:
12 ns
第 # 部分別名:
IPP60R330P6XKSA1 SP001017060
單位重量:
0.211644 oz
Tags
IPP60R3, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 12 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
***et
Trans MOSFET N-CH 600(Min)V 12A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V 12A TO220-3
***ark
Mosfet, N-Ch, 600V, 12A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.297Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.297ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:93W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 12A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.297ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:93W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
型號 製造商 描述 庫存 價格
IPP60R330P6XKSA1
DISTI # IPP60R330P6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 12A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPP60R330P6XKSA1
    DISTI # 726-IPP60R330P6XKSA1
    Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant
    0
      IPP60R330P6
      DISTI # 726-IPP60R330P6
      Infineon Technologies AGMOSFET LOW POWER_LEGACY
      RoHS: Compliant
      0
        IPP60R330P6XKSA1
        DISTI # 2781181
        Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-220
        RoHS: Compliant
        0
        • 100:$2.0100
        • 25:$2.4500
        • 5:$2.8200
        IPP60R330P6XKSA1
        DISTI # 2781181
        Infineon Technologies AGMOSFET, N-CH, 600V, 12A, TO-2200
        • 500:£0.9100
        • 250:£0.9760
        • 100:£1.0400
        • 10:£1.3700
        • 1:£1.7300
        圖片 型號 描述
        IPP60R330P6XKSA1

        Mfr.#: IPP60R330P6XKSA1

        OMO.#: OMO-IPP60R330P6XKSA1

        MOSFET LOW POWER_LEGACY
        IPP60R330P6

        Mfr.#: IPP60R330P6

        OMO.#: OMO-IPP60R330P6-1190

        MOSFET LOW POWER_LEGACY
        IPP60R330P6XKSA1

        Mfr.#: IPP60R330P6XKSA1

        OMO.#: OMO-IPP60R330P6XKSA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 600V 12A TO220-3
        可用性
        庫存:
        Available
        訂購:
        5000
        輸入數量:
        IPP60R330P6XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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