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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SI2316DS-T1-GE3 DISTI # V36:1790_09216801 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant | 0 |
|
| SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3-ND | Vishay Siliconix | MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (Alt: SI2316DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI2316DS-T1-GE3 DISTI # 12R3248 | Vishay Intertechnologies | N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW RoHS Compliant: Yes | 0 |
|
| SI2316DS-T1-GE3 DISTI # 781-SI2316DS-GE3 | Vishay Intertechnologies | MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant | 0 |
|
| SI2316DS-T1-GE3 | Vishay Intertechnologies | 2629 | ||
| SI2316DS-T1-GE3 | Vishay Intertechnologies | MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant | Americas - |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: SI2316DS-T1-E3 OMO.#: OMO-SI2316DS-T1-E3 |
MOSFET 30V 3.4A 0.96W 50mohm @ 10V |
|
|
Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3 |
MOSFET 30V 3.4A 0.96W 50mohm @ 10V |
|
Mfr.#: SI2316DS-T1 OMO.#: OMO-SI2316DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2316BDS-E3 |
|
Mfr.#: SI2316DS-T1-E3 OMO.#: OMO-SI2316DS-T1-E3-VISHAY |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
|
Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3-VISHAY |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
|
Mfr.#: SI2316DS-T1-E3-CUT TAPE |
全新原裝 |
