SPS04N60C3

Mfr. #:: SPS04N60C3
製造商:: Rochester Electronics, LLC
描述:: IGBT Transistors MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3
生命週期:: 製造商新產品
數據表:: SPS04N60C3 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

系列: CoolMOS C3

打包: 管子

部分別名: SP000307419 SPS04N60C3BKMA1

單位重量: 0.139332 oz

安裝方式: 通孔

商品名: 酷摩

包裝盒: IPAK-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 50 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 9.5 ns

上升時間: 2.5 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 4.5 A

Vds-漏-源-擊穿電壓: 650 V

Rds-On-Drain-Source-Resistance: 950 mOhms

晶體管極性: N通道

典型關斷延遲時間: 58.5 ns

典型開啟延遲時間: 6 ns

通道模式: 增強

Tags: SPS04N, SPS04, SPS0, SPS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPS04N60C3 描述

***ical: Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251

***et: Trans MOSFET N-CH 650V 4.5A 3-Pin TO-251 Tube

***i-Key: MOSFET N-CH 650V 4.5A TO251-3

***nell: MOSFET, N, TO-251

***ark: Mosfet, N Channel, 650V, 4.5A, To-251-3; Transistor Polarity:n Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.85Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Msl:- Rohs Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
SPS04N60C3BKMA1 DISTI # SPS04N60C3BKMA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 4.5A TO251-3 RoHS: Compliant Min Qty: 1500 Container: Tube	Limited Supply - Call
SPS04N60C3 DISTI # 33P8226	Infineon Technologies AG	MOSFET, N CHANNEL, 650V, 4.5A, TO-251-3,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.85ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- , RoHS Compliant: Yes	0
SPS04N60C3	Infineon Technologies AG	Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	90000	1000:$0.5200 500:$0.5400 100:$0.5600 25:$0.5900 1:$0.6300
SPS04N60C3AKMA1	Infineon Technologies AG	RoHS: Not Compliant	25000	1000:$0.6600 500:$0.7000 100:$0.7300 25:$0.7600 1:$0.8100
SPS04N60C3BKMA1	Infineon Technologies AG	Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	15000	1000:$0.6600 500:$0.7000 100:$0.7300 25:$0.7600 1:$0.8100
SPS04N60C3 DISTI # 726-SPS04N60C3	Infineon Technologies AG	MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3 RoHS: Compliant	0

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