We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| MTB6N60E DISTI # MTB6N60E | ON Semiconductor | - Bulk (Alt: MTB6N60E) RoHS: Not Compliant Min Qty: 544 Container: Bulk | Americas - 0 |
|
| MTB6N60E1 DISTI # MTB6N60E1 | ON Semiconductor | - Bulk (Alt: MTB6N60E1) RoHS: Not Compliant Min Qty: 544 Container: Bulk | Americas - 0 |
|
| MTB6N60E | ON Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 17 |
|
| MTB6N60E1 | ON Semiconductor | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 125 |
|
| MTB6N60ET4 | ON Semiconductor | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 940 |
|
| MTB6N60E | MOTOROLA | 63 |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: MTB60B06Q8 OMO.#: OMO-MTB60B06Q8-1190 |
全新原裝 |
|
|
Mfr.#: MTB60N06 OMO.#: OMO-MTB60N06-1190 |
全新原裝 |
|
|
Mfr.#: MTB60N06HDL OMO.#: OMO-MTB60N06HDL-1190 |
全新原裝 |
|
|
Mfr.#: MTB60N06HDT4G OMO.#: OMO-MTB60N06HDT4G-1190 |
全新原裝 |
|
|
Mfr.#: MTB60N06J3 OMO.#: OMO-MTB60N06J3-1190 |
全新原裝 |
|
|
Mfr.#: MTB60N10E7LT4 OMO.#: OMO-MTB60N10E7LT4-1190 |
- Bulk (Alt: MTB60N10E7LT4) |
|
|
Mfr.#: MTB6D0N03ATH8 OMO.#: OMO-MTB6D0N03ATH8-1190 |
全新原裝 |
|
|
Mfr.#: MTB6N60E T6N60E OMO.#: OMO-MTB6N60E-T6N60E-1190 |
全新原裝 |
|
|
Mfr.#: MTB6N60E1 OMO.#: OMO-MTB6N60E1-1190 |
- Bulk (Alt: MTB6N60E1) |
|
|
Mfr.#: MTB6N60ET4 OMO.#: OMO-MTB6N60ET4-1190 |
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |