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MSC090SMA070S

MSC090SMA070S
Mfr. #:
MSC090SMA070S
製造商:
Microchip / Microsemi
描述:
MOSFET UNRLS, FG, SIC MOSFET, TO-268
生命週期:
製造商新產品
數據表:
MSC090SMA070S 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
MSC090SMA070S 更多信息
產品屬性
屬性值
製造商：
微芯片
產品分類：
MOSFET
RoHS：
Y
技術：
碳化矽
安裝方式：
貼片/貼片
包裝/案例：
D3PAK-3
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
700 V
Rds On - 漏源電阻：
111 mOhms
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
打包：
管子
品牌：
微芯片/Microsemi
產品類別：
MOSFET
出廠包裝數量：
1
子類別：
MOSFET
Tags
MSC09, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
圖片 型號 描述
MSC090SMA070B

Mfr.#: MSC090SMA070B

OMO.#: OMO-MSC090SMA070B

 MOSFET UNRLS, FG, SIC MOSFET, TO-247
MSC090SMA070S

Mfr.#: MSC090SMA070S

OMO.#: OMO-MSC090SMA070S

 MOSFET UNRLS, FG, SIC MOSFET, TO-268
可用性
庫存:
Available
訂購:
1000
輸入數量:
MSC090SMA070S的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$12.42
US$12.42
5
US$11.78
US$58.90
10
US$11.35
US$113.50
25
US$10.91
US$272.75
50
US$10.50
US$525.00
100
US$9.64
US$964.00
250
US$9.29
US$2 322.50
500
US$8.96
US$4 480.00
1000
US$8.23
US$8 230.00
從...開始
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