CSD16411Q3

Mfr. #:: CSD16411Q3
描述:: MOSFET N-CH 25V 56A 8-SON
生命週期:: 製造商新產品
數據表:: CSD16411Q3 數據表
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更多信息:: CSD16411Q3 更多信息 CSD16411Q3 Product Details

產品屬性
屬性值

製造商: TI

產品分類: FET - 單

系列: 場效應管

打包: Digi-ReelR 替代包裝

安裝方式: 貼片/貼片

商品名: 場效應管

包裝盒: 8-PowerTDFN

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: 8-VSON (3.3x3.3)

配置: 單身的

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 2.7W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 25V

輸入電容-Ciss-Vds: 570pF @ 12.5V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 14A (Ta), 56A (Tc)

Rds-On-Max-Id-Vgs: 10 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2.3V @ 250μA

柵極電荷-Qg-Vgs: 3.8nC @ 4.5V

鈀功耗: 2.7 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 3.1 ns

上升時間: 7.8 ns

VGS-柵極-源極-電壓: 16 V

Id 連續漏極電流: 14 A

Vds-漏-源-擊穿電壓: 25 V

VGS-th-Gate-Source-Threshold-Voltage: 2 V

Rds-On-Drain-Source-Resistance: 15 mOhms

晶體管極性: N通道

典型關斷延遲時間: 6 ns

典型開啟延遲時間: 5.3 ns

Qg-門電荷: 2.9 nC

正向跨導最小值: 30 S

通道模式: 增強

Tags: CSD16411, CSD1641, CSD164, CSD16, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD16411Q3 描述

***as Instruments: 25V, N ch NexFET MOSFET™, single SON3x3, 15mOhm 8-VSON-CLIP -55 to 150

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications.

***ical: Trans MOSFET N-CH 25V 14A 8-Pin VSON-CLIP EP T/R

***nell: N CHANNEL MOSFET, 25V, 56A, SON

***ponent Sense: MOSFET N-Ch NexFET Power MOSFETs

***ark: Fet, N Ch, Single, 25V, 8Son; Transistor Polarity:n Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes

CSD16411Q3 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型號	描述	庫存	價格
CSD16411Q3 DISTI # 296-24255-1-ND	MOSFET N-CH 25V 56A 8-SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7661In Stock	1000:$0.4333 500:$0.5416 100:$0.7311 10:$0.9480 1:$1.0800
CSD16411Q3 DISTI # 296-24255-6-ND	MOSFET N-CH 25V 56A 8-SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7661In Stock	1000:$0.4333 500:$0.5416 100:$0.7311 10:$0.9480 1:$1.0800
CSD16411Q3 DISTI # 296-24255-2-ND	MOSFET N-CH 25V 56A 8-SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	12500:$0.3418 5000:$0.3549 2500:$0.3812
CSD16411Q3 DISTI # CSD16411Q3	Trans MOSFET N-CH 25V 14A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD16411Q3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3459 5000:$0.3299 10000:$0.3189 15000:$0.3079 25000:$0.2989
CSD16411Q3 DISTI # CSD16411Q3	Trans MOSFET N-CH 25V 14A 8-Pin SON EP T/R (Alt: CSD16411Q3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD16411Q3	N-Channel NexFET&#153,Power MOSFET	7365	1000:$0.2700 750:$0.3000 500:$0.3800 250:$0.4700 100:$0.5000 25:$0.5900 10:$0.6400 1:$0.7200
CSD16411Q3 DISTI # 595-CSD16411Q3	MOSFET N-Ch NexFET Power MOSFETs RoHS: Compliant	0	1:$0.8900 10:$0.7400 100:$0.4780 1000:$0.3830 2500:$0.3470
CSD16411Q3/2801 DISTI # N/A	MOSFET QFN 3x3 Single N 25V	0
CSD16411Q3	Power Field-Effect Transistor, 14A I(D), 25V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1153	1000:$0.3500 500:$0.3700 100:$0.3900 25:$0.4000 1:$0.4300
CSD16411Q3 DISTI # 2435715	FET, N CH, SINGLE, 25V, 8SON, FULL REEL RoHS: Compliant	0	2500:$0.5350
CSD16411Q3 DISTI # 1710773RL	FET, N CH, SINGLE, 25V, 8SON RoHS: Compliant	0	1:$1.4100 10:$1.1800 100:$0.7560 1000:$0.6060 2500:$0.5500
CSD16411Q3 DISTI # 1710773	FET, N CH, SINGLE, 25V, 8SON RoHS: Compliant	0	1:$1.4100 10:$1.1800 100:$0.7560 1000:$0.6060 2500:$0.5500

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