BSC030N03LSGATMA1

Mfr. #:: BSC030N03LSGATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 100A TDSON-8
生命週期:: 製造商新產品
數據表:: BSC030N03LSGATMA1 數據表
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產品屬性
屬性值

製造商: 英飛凌科技

產品分類: FET - 單

系列: 優化MOS

打包: Digi-ReelR 替代包裝

部分別名: BSC030N03LS BSC030N03LSGXT G SP000237661

安裝方式: 貼片/貼片

商品名: 優化MOS

包裝盒: 8-PowerTDFN

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: PG-TDSON-8

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 69W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 4300pF @ 15V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 23A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 3 mOhm @ 30A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

柵極電荷-Qg-Vgs: 55nC @ 10V

晶體管極性: N通道

Tags: BSC030N03LSG, BSC030N03L, BSC030N03, BSC030N0, BSC030N, BSC030, BSC03, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC030N03LSGATMA1 描述

***ure Electronics: N-Channel 30 V 3 mOhm OptiMOS3 Power-MOSFET - PG-TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

型號	製造商	描述	庫存	價格
BSC030N03LSGATMA1 DISTI # V72:2272_06384550	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant	3707	3000:$0.3750 1000:$0.3789 500:$0.4630 250:$0.5154 100:$0.5212 25:$0.6420 10:$0.6498 1:$0.7405
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	309In Stock	1000:$0.4886 500:$0.6189 100:$0.7981 10:$1.0100 1:$1.1400
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	309In Stock	1000:$0.4886 500:$0.6189 100:$0.7981 10:$1.0100 1:$1.1400
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.4206
BSC030N03LSGATMA1 DISTI # 31273903	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R RoHS: Compliant	3707	3000:$0.3750 1000:$0.3789 500:$0.4630 250:$0.5154 100:$0.5212 25:$0.6420 20:$0.6498
BSC030N03LSGXT/IBM DISTI # BSC030N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 30000	5000:$0.4119 10000:$0.4109 20000:$0.4099 30000:$0.4089 50000:$0.4069
BSC030N03LSGATMA1 DISTI # 60R2485	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	4606	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LS G DISTI # 726-BSC030N03LS-G	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	4848	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LSGATMA1 DISTI # 726-BSC030N03LSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	4892	1:$0.9500 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320
BSC030N03LSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	500	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
BSC030N03LSGATMA1 DISTI # 8259112P	Infineon Technologies AG	MOSFET N-CH 23A 30V OPTIMOS3 TDSON8EP, RL	1700	100:£0.2570
BSC030N03LSGATMA1 DISTI # BSC030N03LSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,98A,69W,PG-TDSON-8	2739	1:$0.6732 3:$0.5972 10:$0.5016 100:$0.4499 1000:$0.4190
BSC030N03LSGATMA1 DISTI # C1S322000606399	Infineon Technologies AG	MOSFETs RoHS: Compliant	3707	250:$0.5326 100:$0.5342 25:$0.6523 10:$0.6551
BSC030N03LSGATMA1 DISTI # 1775436	Infineon Technologies AG	MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant	4606	1:$1.5100 10:$1.2800 100:$0.9800 500:$0.8660 1000:$0.6840 5000:$0.6130
BSC030N03LSGATMA1 DISTI # 1775436	Infineon Technologies AG	MOSFET, N CH, 100A, 30V, PG-TDSON-8 RoHS: Compliant	4606	5:£0.6060 25:£0.5490 100:£0.4120 250:£0.3690 500:£0.3260

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