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IHW30N135R3FKSA1

IHW30N135R3FKSA1
Mfr. #:
IHW30N135R3FKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命週期:
製造商新產品
數據表:
IHW30N135R3FKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IHW30N135R3FKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
1350 V
集電極-發射極飽和電壓：
1.65 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
60 A
Pd - 功耗：
349 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
RC
打包：
管子
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
240
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IHW30N135R3 IHW3N135R3XK SP000989496
單位重量：
1.340411 oz
Tags
IHW30N13, IHW30N1, IHW30N, IHW3, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247
***et
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247
*** Source Electronics
Reverse conducting IGBT with monolithic body diode
***et Europe
Trans IGBT Chip N-CH 1.35KV 60A 3-Pin TO-247 Tube
***ical
Trans IGBT Chip N-CH 1350V 60A 349000mW Tube
***an P&S
1350V,60A,Reverse Conducting IGBT
***ark
IGBT, SINGLE, 1.35KV, 60A, TO-247-3
***ronik
IGBT 1350V 60A 1,65V TO247-3
***i-Key
IGBT 1350V 60A 349W TO247-3
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT SINGOLO 1.35KV 60A TO-247-3; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:349W; Tensione Collettore-Emettitore V(br)ceo:1.35kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
Infineon 3rd Generation Reverse Conducting IGBTs
Infineon's 3rd Generation Reverse Conducting IGBTs have been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. Infineon RC-H technology has set the benchmark of Tj(max) of 175°C to offer higher lifetime reliability. Recent portfolio extension to 30A and 40A at 1200V and 1350V defines the new trend for higher power density and better reliability devices. 40A 1350V device is capable for switching up to 50kHz with VCE(sat) value of 1.65V at 25°C – a staggering 5% lower loss than the next best competitor.Learn More
型號 製造商 描述 庫存 價格
IHW30N135R3FKSA1
DISTI # V99:2348_06377154		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 500:$2.5910
  • 250:$2.7810
  • 100:$3.0900
  • 50:$3.4330
  • 25:$3.8140
  • 10:$4.2379
  • 1:$5.5275
IHW30N135R3FKSA1
DISTI # V36:1790_06377154		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IHW30N135R3FKSA1
    DISTI # IHW30N135R3FKSA1-ND    		Infineon Technologies AGIGBT 1350V 60A 349W TO247-3
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Limited Supply - Call
    • 240:$3.9175
    IHW30N135R3FKSA1
    DISTI # 33157326    		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		240
    • 500:$2.5910
    • 250:$2.7810
    • 100:$3.0900
    • 50:$3.4330
    • 25:$3.8140
    • 10:$4.2379
    • 3:$5.0250
    IHW30N135R3FKSA1
    DISTI # IHW30N135R3FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW30N135R3FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$2.3900
    • 2400:$2.3900
    • 960:$2.4900
    • 480:$2.5900
    • 240:$2.6900
    IHW30N135R3FKSA1
    DISTI # IHW30N135R3    		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 60A 3-Pin TO-247 Tube (Alt: IHW30N135R3)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Asia - 0
      IHW30N135R3FKSA1
      DISTI # SP000989496      		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 60A 3-Pin TO-247 Tube (Alt: SP000989496)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 0
      • 1000:€1.9900
      • 500:€2.0900
      • 100:€2.1900
      • 50:€2.2900
      • 25:€2.3900
      • 10:€2.4900
      • 1:€2.6900
      IHW30N135R3FKSA1
      DISTI # 50Y1987      		Infineon Technologies AGIGBT Single Transistor, 60 A, 1.65 V, 349 W, 1.35 kV, TO-247, 3 RoHS Compliant: Yes0
      • 500:$3.2000
      • 250:$3.5800
      • 100:$3.7700
      • 50:$3.9600
      • 25:$4.1500
      • 10:$4.3400
      • 1:$5.1100
      IHW30N135R3
      DISTI # 726-IHW30N135R3      		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS TrenchStop RC
      RoHS: Compliant      		240
      • 1:$5.0600
      • 10:$4.3000
      • 100:$3.7300
      • 250:$3.5400
      • 500:$3.1700
      IHW30N135R3FKSA1
      DISTI # 726-IHW30N135R3FKSA1      		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
      RoHS: Compliant      		228
      • 1:$5.0600
      • 10:$4.3000
      • 100:$3.7300
      • 250:$3.5400
      • 500:$3.1700
      IHW30N135R3FKSA1
      DISTI # 1107449      		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1350V 30A TO247, PK54
      • 150:£2.6500
      • 60:£2.8500
      • 30:£3.0570
      • 6:£3.3200
      • 3:£3.8470
      IHW30N135R3FKSA1
      DISTI # 1107449P      		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1350V 30A TO247, TU1326
      • 150:£2.6500
      • 60:£2.8500
      • 30:£3.0570
      • 6:£3.3200
      IHW30N135R3FKSA1
      DISTI # IHW30N135R3      		Infineon Technologies AGTransistor: IGBT,1.35kV,30A,175W,TO247-351
      • 1:$4.3900
      • 3:$3.9500
      • 10:$3.4900
      • 30:$3.1400
      IHW30N135R3FKSA1
      DISTI # 2480886      		Infineon Technologies AGIGBT, SINGLE, 1.35KV, 60A, TO-247-3
      RoHS: Compliant      		1590
      • 240:$5.9400
      • 10:$7.2500
      • 1:$8.0600
      IHW30N135R3FKSA1
      DISTI # 2480886      		Infineon Technologies AGIGBT, SINGLE, 1.35KV, 60A, TO-247-3
      RoHS: Compliant      		1591
      • 500:£2.2000
      • 250:£2.4600
      • 100:£2.5900
      • 10:£2.9900
      • 1:£4.3300
      圖片 型號 描述
      LM6172IM/NOPB

      Mfr.#: LM6172IM/NOPB

      OMO.#: OMO-LM6172IM-NOPB

      		 High Speed Operational Amplifiers Dual High Speed,Low Pwr Amp
      OPA2277PA

      Mfr.#: OPA2277PA

      OMO.#: OMO-OPA2277PA

      		 Precision Amplifiers High Precision Oper Amplifier
      SN74AHCT1G04DBVR

      Mfr.#: SN74AHCT1G04DBVR

      OMO.#: OMO-SN74AHCT1G04DBVR

      		 Inverters Single
      AP101 30R J

      Mfr.#: AP101 30R J

      OMO.#: OMO-AP101-30R-J

      		 Thick Film Resistors - Through Hole 100W 30 Ohm High Power
      AP101 10R J

      Mfr.#: AP101 10R J

      OMO.#: OMO-AP101-10R-J

      		 Thick Film Resistors - Through Hole 100W 10 Ohm High Power
      WV-T247-101E

      Mfr.#: WV-T247-101E

      OMO.#: OMO-WV-T247-101E

      		 Heat Sinks Heatsink for TO-247 DEGREASED
      WV-T247-101E

      Mfr.#: WV-T247-101E

      OMO.#: OMO-WV-T247-101E-OHMITE

      		 HEATSINK AND CLIP FOR TO-247
      OPA2277PA

      Mfr.#: OPA2277PA

      OMO.#: OMO-OPA2277PA-TEXAS-INSTRUMENTS

      		 Operational Amplifiers - Op Amps High Precision Oper Amplifie
      LM6172IM/NOPB

      Mfr.#: LM6172IM/NOPB

      OMO.#: OMO-LM6172IM-NOPB-TEXAS-INSTRUMENTS

      		 Operational Amplifiers - Op Amps Dual High Speed,Low Pwr Amp
      AP101 10R J

      Mfr.#: AP101 10R J

      OMO.#: OMO-AP101-10R-J-OHMITE

      		 Thick Film Resistors - Through Hole 100W 10 Ohm High Powe
      可用性
      庫存:
      216
      訂購:
      2199
      輸入數量:
      IHW30N135R3FKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$5.06
      US$5.06
      10
      US$4.30
      US$43.00
      100
      US$3.73
      US$373.00
      250
      US$3.54
      US$885.00
      500
      US$3.17
      US$1 585.00
      從...開始
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