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SIHH100N60E-T1-GE3

SIHH100N60E-T1-GE3
Mfr. #:
SIHH100N60E-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 650V Vds; 30V Vgs PowerPAK 8x8
生命週期:
製造商新產品
數據表:
SIHH100N60E-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SIHH100N60E-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-4
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
28 A
Rds On - 漏源電阻：
100 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
53 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
174 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
系列：
E
晶體管類型：
1 N-Channel
品牌：
威世 / Siliconix
正向跨導 - 最小值：
12 S
秋季時間：
41 ns
產品類別：
MOSFET
上升時間：
54 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
41 ns
典型的開啟延遲時間：
26 ns
Tags
SIHH100, SIHH10, SIHH1, SIHH, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHH100N60E-T1-GE3
DISTI # V72:2272_22759367		Vishay IntertechnologiesE Series Power MOSFET PowerPAK 8x8, 100 m @ 10V0
    SIHH100N60E-T1-GE3
    DISTI # SIHH100N60E-T1-GE3CT-ND    		Vishay SiliconixMOSFET E SERIES 600V POWERPAK 8X
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		3025In Stock
    • 1000:$3.9348
    • 500:$4.5177
    • 100:$5.1881
    • 10:$6.2660
    • 1:$6.9400
    SIHH100N60E-T1-GE3
    DISTI # SIHH100N60E-T1-GE3DKR-ND    		Vishay SiliconixMOSFET E SERIES 600V POWERPAK 8X
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		3025In Stock
    • 1000:$3.9348
    • 500:$4.5177
    • 100:$5.1881
    • 10:$6.2660
    • 1:$6.9400
    SIHH100N60E-T1-GE3
    DISTI # SIHH100N60E-T1-GE3TR-ND    		Vishay SiliconixMOSFET E SERIES 600V POWERPAK 8X
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 3000:$3.6787
    SIHH100N60E-T1-GE3
    DISTI # SIHH100N60E-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHH100N60E-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$3.3900
    • 18000:$3.4900
    • 12000:$3.5900
    • 6000:$3.7900
    • 3000:$3.8900
    SIHH100N60E-T1-GE3
    DISTI # 81AC3461    		Vishay IntertechnologiesN-CHANNEL 600V0
    • 2400:$3.2100
    • 1600:$3.3700
    • 800:$3.5900
    • 400:$3.7000
    • 1:$3.7800
    SIHH100N60E-T1-GE3
    DISTI # 99AC0536    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 28A, 150DEG C, 174W,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes0
    • 500:$4.2100
    • 250:$4.6300
    • 100:$5.0300
    • 50:$5.3000
    • 25:$5.5800
    • 10:$6.1200
    • 1:$6.8000
    SIHH100N60E-T1-GE3
    DISTI # 78-SIHH100N60E-T1GE3    		Vishay IntertechnologiesMOSFET 650V Vds,30V Vgs PowerPAK 8x8
    RoHS: Compliant    		3025
    • 1:$6.7300
    • 10:$6.0600
    • 25:$5.5200
    • 100:$4.9800
    • 250:$4.5800
    • 500:$4.1700
    • 1000:$3.6300
    • 3000:$3.5000
    SIHH100N60E-T1-GE3
    DISTI # 3014143    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 28A, 150DEG C, 174W
    RoHS: Compliant    		0
    • 1000:$4.7700
    • 500:$5.3200
    • 250:$5.9600
    • 100:$6.2900
    • 10:$7.4900
    • 1:$9.6200
    SIHH100N60E-T1-GE3
    DISTI # 3014143    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 28A, 150DEG C, 174W0
    • 500:£3.0200
    • 250:£3.3200
    • 100:£3.6100
    • 10:£4.0000
    • 1:£5.3700
    圖片 型號 描述
    SIHH100N60E-T1-GE3

    Mfr.#: SIHH100N60E-T1-GE3

    OMO.#: OMO-SIHH100N60E-T1-GE3

    		 MOSFET 650V Vds; 30V Vgs PowerPAK 8x8
    SIHH100N60E-T1-GE3

    Mfr.#: SIHH100N60E-T1-GE3

    OMO.#: OMO-SIHH100N60E-T1-GE3-VISHAY

    		 E Series Power MOSFET PowerPAK 8x8, 100 m @ 10V
    可用性
    庫存:
    Available
    訂購:
    1986
    輸入數量:
    SIHH100N60E-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$6.73
    US$6.73
    10
    US$6.06
    US$60.60
    25
    US$5.52
    US$138.00
    100
    US$4.98
    US$498.00
    250
    US$4.58
    US$1 145.00
    500
    US$4.17
    US$2 085.00
    1000
    US$3.63
    US$3 630.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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