FQD13N06LTM

Mfr. #:: FQD13N06LTM
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 60V N-Channel QFET Logic Level
生命週期:: 製造商新產品
數據表:: FQD13N06LTM 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: E

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 60 V

Id - 連續漏極電流：: 11 A

Rds On - 漏源電阻：: 115 mOhms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2.5 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 2.39 mm

長度：: 6.73 mm

系列：: FQD13N06L

晶體管類型：: 1 N-Channel

類型：: MOSFET

寬度：: 6.22 mm

品牌：: 安森美半導體/飛兆半導體

正向跨導 - 最小值：: 6 S

秋季時間：: 40 ns

產品類別：: MOSFET

上升時間：: 90 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 20 ns

典型的開啟延遲時間：: 8 ns

第 # 部分別名：: FQD13N06LTM_NL

單位重量：: 0.009184 oz

Tags: FQD13N06LTM, FQD13N06LT, FQD13N06L, FQD13N0, FQD13, FQD1, FQD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQD13N06LTM 描述

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK

***ark: TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,11A I(D),TO-252AA

***ure Electronics: N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3

***ment14 APAC: MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Source Voltage Vds:60V; On Resistance

***roFlash: Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 28W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***emi: N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ

***ure Electronics: N-Channel 60 V 0.107 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:11mA; Package/Case:3-TO-251; Operating Temperature Range:-55°C to +175°C

***rchild Semiconductor: These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.

***emi: N-Channel Power MOSFET, QFET®, 60 V, 10 A, 140 mΩ, DPAK

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

*** Electronics: RFD14N05SM FSC TRANSISTOR MOSFET N-CH 50V 14A TO- 252AA RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Alternate Case Style: TO-252; Current Id Max: 14A; Current Temperature: 25°C; External Depth: 10.5mm; External Length / Height: 2.55mm; External Width: 6.8mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Ptot Max: 48W; Pulse Current Idm: 22A; SMD Marking: RFD14N05SM; Termination Type: Surface Mount Device; Voltage Vds Typ: 50V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

Market price

型號	製造商	描述	庫存	價格
FQD13N06LTM DISTI # V72:2272_06301232	ON Semiconductor	Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R	2465	1000:$0.2870 500:$0.3593 100:$0.3595 25:$0.5464 10:$0.5469 1:$0.6536
FQD13N06LTM DISTI # FQD13N06LTMCT-ND	ON Semiconductor	MOSFET N-CH 60V 11A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2355In Stock	1000:$0.3506 500:$0.4340 100:$0.5800 10:$0.7470 1:$0.8500
FQD13N06LTM DISTI # FQD13N06LTMDKR-ND	ON Semiconductor	MOSFET N-CH 60V 11A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2355In Stock	1000:$0.3506 500:$0.4340 100:$0.5800 10:$0.7470 1:$0.8500
FQD13N06LTM DISTI # FQD13N06LTMTR-ND	ON Semiconductor	MOSFET N-CH 60V 11A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.3100
FQD13N06LTM DISTI # 31645159	ON Semiconductor	Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R	5000	2500:$0.1277
FQD13N06LTM DISTI # 31314264	ON Semiconductor	Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R	2465	1000:$0.2870 500:$0.3593 100:$0.3595 32:$0.5464
FQD13N06LTM DISTI # FQD13N06LTM	ON Semiconductor	Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R (Alt: FQD13N06LTM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 44090	2500:€0.2489 5000:€0.1929 10000:€0.1579 15000:€0.1339 25000:€0.1239
FQD13N06LTM DISTI # FQD13N06LTM	ON Semiconductor	Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD13N06LTM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2149 5000:$0.2139 10000:$0.2109 15000:$0.2079 25000:$0.2029
FQD13N06LTM DISTI # 31Y1522	ON Semiconductor	Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 31Y1522) RoHS: Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0	1:$0.7420 10:$0.6170 25:$0.5460 50:$0.4760 100:$0.4050 250:$0.3790 500:$0.3530
FQD13N06LTM DISTI # 31Y1522	ON Semiconductor	MOSFET, N CH, 60V, 11A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.092ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	2384	1:$0.7260 10:$0.6040 25:$0.5340 50:$0.4650 100:$0.3960 250:$0.3710 500:$0.3460 1000:$0.3210
FQD13N06LTM DISTI # 34C0419	ON Semiconductor	MOSFET Transistor, N Channel, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V RoHS Compliant: Yes	0	1:$0.2590 2500:$0.2580 10000:$0.2480 25000:$0.2410
FQD13N06LTM	ON Semiconductor	N-Channel 60 V 0.115 Ohm Surface Mount LOGIC Mosfet - TO-252-3 RoHS: Compliant	77500Reel	2500:$0.1430 5000:$0.1370
FQD13N06LTM DISTI # 512-FQD13N06LTM	ON Semiconductor	MOSFET 60V N-Channel QFET Logic Level RoHS: Compliant	9517	1:$0.6900 10:$0.5710 100:$0.3680 1000:$0.2950
FQD13N06LTM	ON Semiconductor	RoHS: Not Compliant	2490	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FQD13N06LTM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	1470	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FQD13N06LTM DISTI # FQD13N06LTM	ON Semiconductor	Transistor: N-MOSFET,unipolar,60V,7A,28W,DPAK	527	3:$0.3700 25:$0.3300 100:$0.2600 500:$0.2400 2500:$0.2300
FQD13N06LTM	ON Semiconductor	INSTOCK	12677
FQD13N06LTM DISTI # C1S541901586159	ON Semiconductor	MOSFETs RoHS: Not Compliant	1340	10:$0.4500 1:$0.5380
FQD13N06LTM DISTI # XSFP00000021128	Fairchild Semiconductor Corporation	RoHS: Compliant	62500	2500:$0.2860 62500:$0.2600
FQD13N06LTM DISTI # XSKDRABV0019385	ON SEMICONDUCTOR	RoHS: Compliant	36590	2500:$0.2029 36590:$0.1893
FQD13N06LTM DISTI # 2454166	ON Semiconductor	MOSFET, N CH, 60V, 11A, TO-252AA-3 RoHS: Compliant	2379	1:$1.1000 10:$0.9030 100:$0.5830 1000:$0.4680 2500:$0.4680
FQD13N06LTM DISTI # 2454166RL	ON Semiconductor	MOSFET, N CH, 60V, 11A, TO-252AA-3 RoHS: Compliant	0	1:$1.1000 10:$0.9030 100:$0.5830 1000:$0.4680 2500:$0.4680
FQD13N06LTM DISTI # 2454166	ON Semiconductor	MOSFET, N CH, 60V, 11A, TO-252AA-3 RoHS: Compliant	2394	500:£0.2320 250:£0.2540 100:£0.2760 25:£0.4470 5:£0.4840

相關產品

圖片	型號	描述
	Mfr.#: INA181A4IDBVR OMO.#: OMO-INA181A4IDBVR	Current Sense Amplifiers MULTI CHANNEL CURRENT SENSE L/H SIDE
	Mfr.#: ADUM1210BRZ-RL7 OMO.#: OMO-ADUM1210BRZ-RL7	Digital Isolators Digital Dual-CH
	Mfr.#: FDLL300A OMO.#: OMO-FDLL300A	Diodes - General Purpose, Power, Switching High Conductance Low Leakage
	Mfr.#: ATSAMC21E18A-MUT OMO.#: OMO-ATSAMC21E18A-MUT	ARM Microcontrollers - MCU 32QFN,85C TEMP, GREEN, 5V, 48MHZ, T&R
	Mfr.#: TM4C1294NCPDTI3 OMO.#: OMO-TM4C1294NCPDTI3	ARM Microcontrollers - MCU Tiva C Series MCU
	Mfr.#: TLV75533PDBVR OMO.#: OMO-TLV75533PDBVR	LDO Voltage Regulators 500MA LDO
	Mfr.#: LTST-C19HE1WT OMO.#: OMO-LTST-C19HE1WT	Standard LEDs - SMD LED Red 615nm Grn 525nm/Blu 470nm
	Mfr.#: LMC555CM/NOPB OMO.#: OMO-LMC555CM-NOPB	Timers & Support Products CMOS Timer
	Mfr.#: LMC555CM/NOPB OMO.#: OMO-LMC555CM-NOPB-TEXAS-INSTRUMENTS	IC OSC SINGLE TIMER 3MHZ 8-SOIC
	Mfr.#: LMC555CMM/NOPB OMO.#: OMO-LMC555CMM-NOPB-TEXAS-INSTRUMENTS	Timers & Support Products CMOS TIMER