STGP20H60DF

Mfr. #:: STGP20H60DF
製造商:: STMicroelectronics
描述:: IGBT Transistors 600V 20A High Speed Trench Gate IGBT
生命週期:: 製造商新產品
數據表:: STGP20H60DF 數據表
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更多信息:: STGP20H60DF 更多信息 STGP20H60DF Product Details

產品屬性
屬性值

製造商：: 意法半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-220-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 600 V

集電極-發射極飽和電壓：: 2 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 40 A

Pd - 功耗：: 167 W

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

系列：: STGP20H60DF

打包：: 管子

品牌：: 意法半導體

柵極-發射極漏電流：: 250 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 1000

子類別：: IGBT

單位重量：: 0.081130 oz

Tags: STGP2, STGP, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGP20H60DF 描述

***ical: Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 600 V, 20 A high speed trench gate field-stop IGBT

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

***ical: Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube

***ark: Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant: Yes

***icroelectronics SCT: Short-circuit rugged IGBT, TO-220, Tube

*** Electronic Components: IGBT Transistors 600V 20A High Speed Trench Gate IGBT

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel

***et: STMICROELECTRONICS STGP20V60DF

***ical: Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: STGP19NC60HD Series 600 V 19 A Very Fast IGBT Flange Mount - TO-220

***el Electronic: STMICROELECTRONICS STGP19NC60HD IGBT Single Transistor, 40 A, 2.5 V, 130 W, 600 V, TO-220, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 19 A, 600 V, very fast IGBT with Ultrafast diode

***nell: IGBT, N 600V 19A TO-220; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O

***ure Electronics: STGP19NC60SD Series 600 V 40 A Very Fast IGBT Flange Mount - TO-220

***ical: Trans IGBT Chip N-CH 600V 40A 125000mW 3-Pin(3+Tab) TO-220AB Tube

***ource: N-channel 600V - 20A - TO-220 - medium frequency PowerMESH" IGBT

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 20 A, 600 V fast IGBT with Ultrafast diode

***ical: Trans IGBT Chip N-CH 650V 30A 105000mW Automotive 3-Pin(3+Tab) TO-220 Tube

***ark: IGBT Single Transistor, 15 A, 1.65 V, 105 W, 650 V, TO-220, 3

***ure Electronics: IKP15N65H5 Series 650 V 30 A Through Hole DuoPack IGBT - PG-TO220-3

***p One Stop: 650V DuoPack IGBT and Diode High speed switching series fifth generation

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 650V, 15A, TO220-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 105W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;

***ineon SCT: High Speed 650 V, 15 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***p One Stop: Trans IGBT Chip N-CH 650V 30A 105000mW 3-Pin(3+Tab) TO-220 Tube

***nell: IGBT, 650V, 15A, TO220-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 105W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;

***ineon SCT: High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***et: Trans IGBT Chip N-CH 600V 36A 3-Pin(3+Tab) TO-220

***i-Key: IGBT 600V 36A 178W TO220-3

***i-Key Marketplace: IGBT, 36A, 600V, N-CHANNEL

***el Nordic: Contact for details

Market price

型號	製造商	描述	庫存	價格
STGP20H60DF DISTI # 30593239	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	745	500:$2.0017 100:$2.2950 50:$2.3843 10:$2.8942 8:$3.5955
STGP20H60DF DISTI # 497-13582-5-ND	STMicroelectronics	IGBT 600V 40A 167W TO220 RoHS: Compliant Min Qty: 1 Container: Tube	261In Stock	5000:$1.3580 2500:$1.3750 500:$1.7824 100:$2.1694 50:$2.5462 10:$2.6990 1:$3.0000
STGP20H60DF DISTI # V36:1790_06560705	STMicroelectronics	Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
STGP20H60DF DISTI # STGP20H60DF	STMicroelectronics	Trans IGBT Chip N-CH 650V 40A 3-Pin TO-220 Tube (Alt: STGP20H60DF) RoHS: Compliant Min Qty: 50 Container: Tube	Europe - 0	500:€1.0329 300:€1.1019 200:€1.1309 100:€1.2259 50:€1.4909
STGP20H60DF DISTI # STGP20H60DF	STMicroelectronics	Trans IGBT Chip N-CH 650V 40A 3-Pin TO-220 Tube - Rail/Tube (Alt: STGP20H60DF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	5000:$1.1900 10000:$1.1900 2000:$1.2900 3000:$1.2900 1000:$1.3900
STGP20H60DF DISTI # 89W1470	STMicroelectronics	PTD HIGH VOLTAGE	0	5000:$1.2700 2500:$1.3000 1000:$1.6100 500:$1.8000 100:$1.9400 10:$2.4200 1:$2.8500
STGP20H60DF DISTI # 511-STGP20H60DF	STMicroelectronics	IGBT Transistors 600V 20A High Speed Trench Gate IGBT RoHS: Compliant	986	1:$2.8500 10:$2.4200 100:$1.9400 500:$1.6900 1000:$1.4000 2000:$1.3100 5000:$1.2600
STGP20H60DF	STMicroelectronics		550
STGP20H60DF DISTI # XSFP00000168029	STMicroelectronics	RoHS: Compliant	800 in Stock0 on Order	800:$1.0800 200:$1.1900

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