FFSH20120A-F085

Mfr. #:: FFSH20120A-F085
製造商:: ON Semiconductor
描述:: Schottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD
生命週期:: 製造商新產品
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HTML Datasheet:: FFSH20120A-F085 Datasheet FFSH20120A-F085 Datasheet (P4-P6)FFSH20120A-F085 Datasheet (P7-P8)
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更多信息:: FFSH20120A-F085 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: 肖特基二極管和整流器

RoHS：: Y

產品：: 肖特基碳化矽二極管

安裝方式：: 通孔

包裝/案例：: TO-247-2LD

如果 - 正向電流：: 20 A

Vrrm - 重複反向電壓：: 1200 V

Vf - 正向電壓：: 1.45 V

Ifsm - 正向浪湧電流：: 135 A

配置：: 單身的

技術：: 碳化矽

Ir - 反向電流：: 200 uA

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

資質：: AEC-Q101

打包：: 管子

品牌：: 安森美半導體

Pd - 功耗：: 273 W

產品類別：: 肖特基二極管和整流器

出廠包裝數量：: 450

子類別：: 二極管和整流器

trr - 反向恢復時間：: -

Vr - 反向電壓：: 1200 V

Tags: FFSH201, FFSH2, FFSH, FFS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FFSH20120A-F085 更多信息

FFSH SiC Schottky Diodes: ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.

1200V SiC Schottky Diodes: ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Market price

型號	製造商	描述	庫存	價格
FFSH20120A-F085 DISTI # V99:2348_21657264	ON Semiconductor	Silicon Carbide Schottky Diode	440	500:$13.3800 250:$14.3000 100:$14.5900 25:$16.7100 10:$17.6000 1:$19.3200
FFSH20120A-F085 DISTI # V36:1790_21657264	ON Semiconductor	Silicon Carbide Schottky Diode	0	450000:$10.7600 225000:$10.7700 45000:$12.5500 4500:$16.7200 450:$17.4900
FFSH20120A-F085 DISTI # FFSH20120A-F085OS-ND	ON Semiconductor	1200V 20A AUTO SIC SBD RoHS: Not compliant Min Qty: 1 Container: Tube	449In Stock	450:$15.0381 25:$17.9488 10:$18.7250 1:$20.3700
FFSH20120A-F085 DISTI # 31234725	ON Semiconductor	Silicon Carbide Schottky Diode	1350	500:$13.2660 450:$14.1867
FFSH20120A-F085 DISTI # 29729158	ON Semiconductor	Silicon Carbide Schottky Diode	440	500:$13.3800 250:$14.3000 100:$14.5900 25:$16.7100 10:$17.6000 1:$19.3200
FFSH20120A-F085 DISTI # FFSH20120A-F085	ON Semiconductor	1200V 20AAUTO SIC SBD - Rail/Tube (Alt: FFSH20120A-F085) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$11.3900 2700:$11.5900 1800:$11.7900 450:$11.9900 900:$11.9900
FFSH20120A-F085 DISTI # 62AC6882	ON Semiconductor	SIC SCHOTTKY DIODE, AEC-Q101, TO-247,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:20A,Total Capacitive Charge Qc:120nC,Diode Case Style:TO-247,No. of Pins:2RoHS Compliant: Yes	448	500:$13.5300 250:$14.4700 100:$15.2200 50:$16.2500 25:$17.2700 10:$18.0200 1:$19.5900
FFSH20120A-F085 DISTI # 863-FFSH20120A-F085	ON Semiconductor	Schottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD RoHS: Compliant	663	1:$19.4000 10:$17.8400 25:$17.1000 100:$15.0700 250:$14.3300 500:$13.4000
FFSH20120A-F085 DISTI # 1784267	ON Semiconductor	1200V 20AAUTO SIC SBD, TU	420	150:£9.9910 30:£10.7840
FFSH20120A-F085 DISTI # 2895630	ON Semiconductor	SIC SCHOTTKY DIODE, AEC-Q101, TO-247 RoHS: Compliant	448	450:$22.6700 25:$27.0500 10:$28.2200 1:$30.7000
FFSH20120A-F085 DISTI # 2895630	ON Semiconductor	SIC SCHOTTKY DIODE, AEC-Q101, TO-247	448	100:£10.9200 50:£11.6600 10:£12.3900 5:£14.0600 1:£14.0900

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