IRLR3103PBF

Mfr. #:: IRLR3103PBF
製造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 55A DPAK
生命週期:: 製造商新產品
數據表:: IRLR3103PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 紅外線

產品分類: FET - 單

打包: 管子

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 69 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 54 ns

上升時間: 210 ns

VGS-柵極-源極-電壓: 16 V

Id 連續漏極電流: 46 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 24 mOhms

晶體管極性: N通道

典型關斷延遲時間: 20 ns

典型開啟延遲時間: 9 ns

Qg-門電荷: 33.3 nC

通道模式: 增強

Tags: IRLR3103, IRLR310, IRLR31, IRLR3, IRLR, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLR3103PBF 描述

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: DPAK Polarity: N Power dissipation: 69 W

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

***p One Stop Global: Trans MOSFET N-CH Si 30V 55A 3-Pin(2+Tab) DPAK Tube

***ical: Trans MOSFET N-CH 30V 55A 3-Pin(2+Tab) DPAK

***Components: MOSFET N-Channel 30V 55A DPAK

***th Star Micro: MOSFET N-CH 30V 55A DPAK

***ukat: N-LogL 30V 55A 107W 0,019R TO252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:55A; On Resistance, Rds(on):19mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

***nell: MOSFET, N, 30V, 46A, D-PAK; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:45A; Resistance, Rds on:0.019ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1V; Case style:D-PAK (TO-252); Case style, alternate:D-PAK; Current, Idm pulse:69A; Marking, SMD:IRLR3103; Power dissipation:69W; Power, Pd:69W; Resistance, Rds on @ Vgs = 10V:0.019ohm; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Thermal resistance, junction to case a:1.8°C/W; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V; Voltage, Vgs th min:1V

Market price

型號	製造商	描述	庫存	價格
IRLR3103TRPBF DISTI # IRLR3103PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 55A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2120In Stock	1000:$0.6491 500:$0.8043 100:$1.0177 10:$1.2700 1:$1.4300
IRLR3103TRPBF DISTI # IRLR3103PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 55A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2120In Stock	1000:$0.6491 500:$0.8043 100:$1.0177 10:$1.2700 1:$1.4300
IRLR3103PBF DISTI # IRLR3103PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 55A DPAK RoHS: Compliant Min Qty: 900 Container: Tube	Limited Supply - Call
IRLR3103TRPBF DISTI # IRLR3103PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 55A DPAK RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$0.5925
IRLR3103PBF DISTI # 70017623	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 0.019Ohm,ID 55A,D-Pak (TO-252AA),PD 107W RoHS: Compliant	0	900:$1.4800 1800:$1.4500 4500:$1.4060 9000:$1.3470 22500:$1.2580
IRLR3103PBF DISTI # 942-IRLR3103PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC RoHS: Compliant	119	1:$1.1900 10:$1.0200 100:$0.7850 500:$0.6940 1000:$0.5470 2500:$0.4840 5000:$0.4750 10000:$0.4660
IRLR3103PBF	Infineon Technologies AG	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	75	1000:$0.4600 500:$0.4900 100:$0.5100 25:$0.5300 1:$0.5700
IRLR3103PBF	International Rectifier	Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	49	1000:$0.4600 500:$0.4900 100:$0.5100 25:$0.5300 1:$0.5700
IRLR3103PBF	International Rectifier	20 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5	5:$1.0500 1:$1.4000
IRLR3103PBF	International Rectifier	RoHS: Compliant	Europe - 900
IRLR3103PBF DISTI # IRLR3103PBF	Infineon Technologies AG	N-LogL 30V 55A 107W 0,019R TO252AA RoHS: Compliant	175	75:€0.6127 150:€0.5010 300:€0.4455 600:€0.4290
IRLR3103TRPBF DISTI # IRLR3103PBF-GURT	Infineon Technologies AG	N-LogL 30V 55A 107W 0,019R TO252AA RoHS: Compliant	1750	50:€0.3975 100:€0.3375 500:€0.3075 3000:€0.2960

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