IPW60R125CFD7XKSA1

IPW60R125CFD7XKSA1
Mfr. #:
IPW60R125CFD7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPW60R125CFD7XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IPW60R125CFD7XKSA1 Datasheet
ECAD Model:
更多信息:
IPW60R125CFD7XKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
18 A
Rds On - 漏源電阻:
125 mOhms
Vgs th - 柵源閾值電壓:
3.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
36 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
92 W
配置:
單身的
頻道模式:
增強
打包:
管子
系列:
CoolMOS CFD7
品牌:
英飛凌科技
秋季時間:
6 ns
產品類別:
MOSFET
上升時間:
14 ns
出廠包裝數量:
240
子類別:
MOSFET
典型關斷延遲時間:
66 ns
典型的開啟延遲時間:
31 ns
第 # 部分別名:
IPW60R125CFD7 SP001686040
Tags
IPW60R125C, IPW60R125, IPW60R12, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 SJ High Voltage MOSFET 600V 125/140mOhm TO-247
***i-Key
HIGH POWER_NEW
***ark
Mosfet, 600V, 18A, 150Deg C, 92W; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.104Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 600V, 18A, 150DEG C, 92W; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, 600V, 18A, 150° C, 92W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.104ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:92W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
型號 製造商 描述 庫存 價格
IPW60R125CFD7XKSA1
DISTI # IPW60R125CFD7XKSA1-ND
Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Tube
195In Stock
  • 2640:$2.3322
  • 720:$2.9108
  • 240:$3.4193
  • 25:$3.9452
  • 10:$4.1730
  • 1:$4.6500
IPW60R125CFD7XKSA1
DISTI # IPW60R125CFD7XKSA1
Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 125/140mOhm TO-247 - Rail/Tube (Alt: IPW60R125CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$2.0900
  • 2400:$2.0900
  • 960:$2.1900
  • 480:$2.2900
  • 240:$2.3900
IPW60R125CFD7XKSA1
DISTI # SP001686040
Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 125/140mOhm TO-247 (Alt: SP001686040)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 500:€1.8900
  • 1000:€1.8900
  • 100:€1.9900
  • 25:€2.0900
  • 50:€2.0900
  • 10:€2.2900
  • 1:€2.8900
IPW60R125CFD7XKSA1
DISTI # 71AC0410
Infineon Technologies AGMOSFET, 600V, 18A, 150DEG C, 92W,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes186
  • 500:$2.8000
  • 250:$3.1200
  • 100:$3.2800
  • 50:$3.4500
  • 25:$3.6200
  • 10:$3.7900
  • 1:$4.4600
IPW60R125CFD7XKSA1
DISTI # 726-IPW60R125CFD7XKS
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
80
  • 1:$4.4200
  • 10:$3.7500
  • 100:$3.2500
  • 250:$3.0900
  • 500:$2.7700
IPW60R125CFD7XKSA1
DISTI # XSKDRABV0051214
Infineon Technologies AG 
RoHS: Compliant
720 in Stock0 on Order
  • 720:$2.9300
  • 240:$3.1400
IPW60R125CFD7XKSA1
DISTI # 2916152
Infineon Technologies AGMOSFET, 600V, 18A, 150DEG C, 92W
RoHS: Compliant
186
  • 1000:$3.3500
  • 500:$3.4100
  • 250:$3.6000
  • 100:$3.8100
  • 10:$4.3000
  • 1:$4.6000
IPW60R125CFD7XKSA1
DISTI # 2916152
Infineon Technologies AGMOSFET, 600V, 18A, 150DEG C, 92W196
  • 500:£2.0200
  • 250:£2.2600
  • 100:£2.3800
  • 10:£2.7500
  • 1:£3.6100
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STW28N60DM2

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MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package
IPW60R125P6

Mfr.#: IPW60R125P6

OMO.#: OMO-IPW60R125P6

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STPSC10065D

Mfr.#: STPSC10065D

OMO.#: OMO-STPSC10065D

Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
C3D10060A

Mfr.#: C3D10060A

OMO.#: OMO-C3D10060A

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 10A
STPSC10065D

Mfr.#: STPSC10065D

OMO.#: OMO-STPSC10065D-STMICROELECTRONICS

DIODE SCHOTTKY 650V 10A TO220AC
可用性
庫存:
80
訂購:
2063
輸入數量:
IPW60R125CFD7XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$4.42
US$4.42
10
US$3.75
US$37.50
100
US$3.25
US$325.00
250
US$3.09
US$772.50
500
US$2.77
US$1 385.00
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