RJH1CF7RDPQ-80#T2

Mfr. #:: RJH1CF7RDPQ-80#T2
製造商:: Renesas Electronics
描述:: IGBT Transistors IGBT
生命週期:: 製造商新產品
數據表:: RJH1CF7RDPQ-80#T2 數據表
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HTML Datasheet:: RJH1CF7RDPQ-80#T2 Datasheet RJH1CF7RDPQ-80#T2 Datasheet (P4-P6)RJH1CF7RDPQ-80#T2 Datasheet (P7)
ECAD Model:

產品屬性
屬性值

製造商：: 瑞薩電子

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

打包：: 管子

品牌：: 瑞薩電子

濕氣敏感：: 是的

產品類別：: IGBT晶體管

出廠包裝數量：: 1

子類別：: IGBT

Tags: RJH1CF7RD, RJH1CF7R, RJH1CF7, RJH1CF, RJH1C, RJH1, RJH

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH1CF7RDPQ-80#T2 描述

***et: Trans IGBT Chip 1.2KV 60A 9999-Pin(9999+Tab) TO-247

***i-Key: IGBT 1200V 60A 250W TO247

*** Electronic Components: IGBT Transistors IGBT

***el Nordic: Contact for details

***ineon SCT: Trans IGBT Chip N-CH 1200V 60A 349000mW 3-Pin(3+Tab) TO-247 Tube, PG-TO247-3, RoHS

***ark: Transistor, Igbt, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:349W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins;rohs Compliant: Yes

***ineon: The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications

***ical: Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube

***Parts: IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole

***ure Electronics: N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247

***nell: IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins

***ical: Trans IGBT Chip N-CH 1200V 60A 468000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT, 1200V 30A FS2 Low VCEsat

***ark: Igbt, Single, 1.2Kv, 60A, To-247

*** Electronics: IGBT Transistors 1200V/30A LOW VCE SAT FSII

***nell: TRANSISTOR, IGBT, 1.7V, 60A, TO-247-3;

***el Electronic: RES SMD 1.91M OHM 1% 1/8W 0805

***r Electronics: Insulated Gate Bipolar Transistor

***ical: Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube

*** Electronics: IGBT Transistors 1200V/30A FAST IGBT FSII

***nell: TRANSISTOR, IGBT, 2V, 60A, TO-247-3;

***i-Key: IGBT TRENCH/FS 1200V 60A TO247

*** Stop Electro: Insulated Gate Bipolar Transistor

***ark: Igbt, Single, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:452W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB30N120FL2WG

***ark: Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***et: Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247

***nell: IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.35k; Available until stocks are exhausted

***ineon: The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications

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