IPD15N06S2L64ATMA2

IPD15N06S2L64ATMA2
Mfr. #:
IPD15N06S2L64ATMA2
製造商:
Infineon Technologies
描述:
MOSFET N-CHANNEL_55/60V
生命週期:
製造商新產品
數據表:
IPD15N06S2L64ATMA2 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IPD15N06S2L64ATMA2 DatasheetIPD15N06S2L64ATMA2 Datasheet (P4-P6)IPD15N06S2L64ATMA2 Datasheet (P7-P8)
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-252-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
55 V
Id - 連續漏極電流:
19 A
Rds On - 漏源電阻:
47 mOhms
Vgs th - 柵源閾值電壓:
1.2 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
13 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
47 W
配置:
單身的
頻道模式:
增強
資質:
AEC-Q101
打包:
捲軸
高度:
2.3 mm
長度:
6.5 mm
晶體管類型:
1 N-Channel
寬度:
6.22 mm
品牌:
英飛凌科技
秋季時間:
12 ns
產品類別:
MOSFET
上升時間:
14 ns
出廠包裝數量:
2500
子類別:
MOSFET
典型關斷延遲時間:
21 ns
典型的開啟延遲時間:
4 ns
第 # 部分別名:
IPD15N06S2L-64 SP001063644
單位重量:
0.139332 oz
Tags
IPD15N06S2L64A, IPD15N06S2L6, IPD15N06S, IPD15N06, IPD15, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; On Resistance Rds(On):0.047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
型號 製造商 描述 庫存 價格
IPD15N06S2L64ATMA2
DISTI # V72:2272_06391057
Infineon Technologies AGTrans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R72
  • 25:$0.5023
  • 10:$0.6139
  • 1:$0.7377
IPD15N06S2L64ATMA2
DISTI # V36:1790_06391057
Infineon Technologies AGTrans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R0
  • 2500:$0.2599
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2CT-ND
Infineon Technologies AGN-CHANNEL_55/60V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3245In Stock
  • 1000:$0.3148
  • 500:$0.3935
  • 100:$0.4977
  • 10:$0.6490
  • 1:$0.7400
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2DKR-ND
Infineon Technologies AGN-CHANNEL_55/60V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3245In Stock
  • 1000:$0.3148
  • 500:$0.3935
  • 100:$0.4977
  • 10:$0.6490
  • 1:$0.7400
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2TR-ND
Infineon Technologies AGN-CHANNEL_55/60V
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 25000:$0.2419
  • 12500:$0.2483
  • 5000:$0.2578
  • 2500:$0.2769
IPD15N06S2L64ATMA2
DISTI # 33919527
Infineon Technologies AGTrans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.4594
IPD15N06S2L64ATMA2
DISTI # 26195738
Infineon Technologies AGTrans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R72
  • 28:$0.7377
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2
Infineon Technologies AGN-KANAL POWER MOS - Bulk (Alt: IPD15N06S2L64ATMA2)
RoHS: Compliant
Min Qty: 1471
Container: Bulk
Americas - 0
  • 14710:$0.2159
  • 7355:$0.2189
  • 4413:$0.2269
  • 2942:$0.2359
  • 1471:$0.2439
IPD15N06S2L64ATMA2
DISTI # IPD15N06S2L64ATMA2
Infineon Technologies AGN-KANAL POWER MOS - Tape and Reel (Alt: IPD15N06S2L64ATMA2)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.2829
  • 15000:$0.2879
  • 10000:$0.2979
  • 5000:$0.3089
  • 2500:$0.3209
IPD15N06S2L64ATMA2
DISTI # SP001063644
Infineon Technologies AGN-KANAL POWER MOS (Alt: SP001063644)
RoHS: Compliant
Min Qty: 2500
Europe - 0
  • 25000:€0.2699
  • 15000:€0.2909
  • 10000:€0.3159
  • 5000:€0.3439
  • 2500:€0.4209
IPD15N06S2L64ATMA2
DISTI # 12AC9707
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes15
  • 1000:$0.2950
  • 500:$0.3190
  • 250:$0.3430
  • 100:$0.3680
  • 50:$0.4350
  • 25:$0.5020
  • 10:$0.5700
  • 1:$0.6870
IPD15N06S2L64ATMA2.
DISTI # 27AC6730
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:47W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 25000:$0.2310
  • 15000:$0.2350
  • 10000:$0.2430
  • 5000:$0.2520
  • 1:$0.2620
IPD15N06S2L64ATMA2
DISTI # 726-IPD15N06S2L64AT
Infineon Technologies AGMOSFET N-CHANNEL_55/60V
RoHS: Compliant
7129
  • 1:$0.6800
  • 10:$0.5640
  • 100:$0.3640
  • 1000:$0.2920
  • 2500:$0.2460
IPD15N06S2L64ATMA2Infineon Technologies AGN-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252
RoHS: Not Compliant
2500Reel
  • 2500:$0.2800
IPD15N06S2L64ATMA2Infineon Technologies AGPower Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant
39828
  • 1000:$0.2200
  • 500:$0.2400
  • 100:$0.2500
  • 25:$0.2600
  • 1:$0.2800
IPD15N06S2L64ATMA2
DISTI # 2709988
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-2522515
  • 500:£0.2180
  • 250:£0.2480
  • 100:£0.2780
  • 10:£0.4770
  • 1:£0.5940
IPD15N06S2L64ATMA2
DISTI # XSFP00000116981
Infineon Technologies AGN-Channel 55 V 64 mOhm 13 nC OptiMOSEnhancementMode Power-Transistor-TO-252
RoHS: Compliant
5000 in Stock0 on Order
  • 5000:$0.3733
  • 2500:$0.4000
IPD15N06S2L64ATMA2
DISTI # 2709988
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-252
RoHS: Compliant
2510
  • 1000:$0.4750
  • 500:$0.5930
  • 100:$0.7500
  • 10:$0.9780
  • 1:$1.1200
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CX3225SB24000D0FLJCC

Mfr.#: CX3225SB24000D0FLJCC

OMO.#: OMO-CX3225SB24000D0FLJCC

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RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

Thick Film Resistors - SMD 1K OHM 1%
0ZCJ0005FF2E

Mfr.#: 0ZCJ0005FF2E

OMO.#: OMO-0ZCJ0005FF2E

Resettable Fuses - PPTC Fuse
LM2902LVIPWR

Mfr.#: LM2902LVIPWR

OMO.#: OMO-LM2902LVIPWR-TEXAS-INSTRUMENTS

QUAD CHANNEL AMP
可用性
庫存:
Available
訂購:
1986
輸入數量:
IPD15N06S2L64ATMA2的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.68
US$0.68
10
US$0.56
US$5.64
100
US$0.36
US$36.40
1000
US$0.29
US$292.00
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