BFP640ESDH6327XTSA1

Mfr. #:: BFP640ESDH6327XTSA1
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors RF BIP TRANSISTORS
生命週期:: 製造商新產品
數據表:: BFP640ESDH6327XTSA1 數據表
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產品屬性
屬性值

製造商：: 英飛凌

產品分類：: 射頻雙極晶體管

RoHS：: Y

系列：: BFP640

技術：: 矽

包裝/案例：: SOT-343-4

打包：: 捲軸

品牌：: 英飛凌科技

產品類別：: 射頻雙極晶體管

出廠包裝數量：: 3000

子類別：: 晶體管

第 # 部分別名：: 640ESD BFP BFP64ESDH6327XT H6327 SP000785482

Tags: BFP640ESDH, BFP640ES, BFP640E, BFP64, BFP6, BFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP640ESDH6327XTSA1 描述

***ical: Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin(3+Tab) SOT-343 T/R

***ure Electronics: BFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor

***ineon SCT: The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads, SOT343, RoHS

***ineon: The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V. | Summary of Features: Robust high performance low noise amplifier based on Infineons reliable, high volume SiGe:C wafer technology; 2 kV ESD robustness (HBM) due to integrated protection circuits; High maximum RF input power of 21 dBm; 0.65 dB minimum noise figure typical at 1.5 GHz, 0.7 dB at 2.4 GHz, 6 mA; 26.5 dB maximum gain Gms typical at 1.5 GHz, 23 dB at 2.4 GHz, 30 mA; 27 dBm OIP3 typical at 2.4 GHz, 30 mA; Accurate SPICE GP model available to enable effective design in process (see chapter 6); Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier

Market price

型號	製造商	描述	庫存	價格
BFP640ESDH6327XTSA1 DISTI # V72:2272_06384746	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	4202	3000:$0.1631 1000:$0.1979 500:$0.2491 250:$0.2544 100:$0.2551 25:$0.3649 10:$0.3716 1:$0.4293
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 46GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4371In Stock	1000:$0.2297 500:$0.2973 100:$0.3784 10:$0.5070 1:$0.5900
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 46GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4371In Stock	1000:$0.2297 500:$0.2973 100:$0.3784 10:$0.5070 1:$0.5900
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 46GHZ SOT343 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.1679 15000:$0.1771 6000:$0.1902 3000:$0.2034
BFP640ESDH6327XTSA1 DISTI # 30986123	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	18000	3000:$0.2533
BFP640ESDH6327XTSA1 DISTI # 26195568	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	4202	3000:$0.1624 1000:$0.1979 500:$0.2491 250:$0.2543 100:$0.2551 39:$0.3639
BFP640ESDH6327XTSA1 DISTI # BFP640ESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BFP640ESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1889 6000:$0.1819 12000:$0.1749 18000:$0.1689 30000:$0.1659
BFP640ESDH6327XTSA1 DISTI # 01AC4780	Infineon Technologies AG	RF BIP TRANSISTORS,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.7V,Transition Frequency ft:45GHz,Power Dissipation Pd:160mW,DC Collector Current:45mA,DC Current Gain hFE:250hFE,RF Transistor Case:TSFP,No. of RoHS Compliant: Yes	1583	1:$0.5800 10:$0.4740 25:$0.4120 50:$0.3510 100:$0.2890 250:$0.2670 500:$0.2460 1000:$0.2240
BFP640ESDH6327XTSA1 DISTI # 726-BFP640ESDH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	5673	1:$0.5800 10:$0.4740 100:$0.2890 1000:$0.2240 3000:$0.1910
BFP 640ESD H6327 DISTI # 726-BFP640ESDH6327XT	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	1815	1:$0.5800 10:$0.4740 100:$0.2890 1000:$0.2240 3000:$0.1910
BFP640ESDH6327XTSA1	Infineon Technologies AG	BFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor RoHS: Compliant	27000Reel	3000:$0.1810
BFP640ESDH6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN RoHS: Compliant	345	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100
BFP640ESDH6327XTSA1 DISTI # 8275154	Infineon Technologies AG	LOW NOISE SIGE RF TRANSISTOR NPN SOT343, PK	175	25:£0.1600 125:£0.1560
BFP640ESDH6327XTSA1 DISTI # 8275154P	Infineon Technologies AG	LOW NOISE SIGE RF TRANSISTOR NPN SOT343, RL	1925	125:£0.1560
BFP640ESDH6327XTSA1 DISTI # 2443521	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	1583	1:$0.9180 10:$0.7500 100:$0.4580 1000:$0.3550 3000:$0.3030 9000:$0.2950
BFP640ESDH6327XTSA1 DISTI # C1S322000559949	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	4202	250:$0.2543 100:$0.2551 25:$0.3639 10:$0.3716
BFP640ESDH6327XTSA1 DISTI # 2443521	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	1608	5:£0.4100 25:£0.2410 100:£0.2400 250:£0.2390 500:£0.2380

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