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HGTG10N120BND

HGTG10N120BND
Mfr. #:
HGTG10N120BND
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 35A 1200V N-Ch
生命週期:
製造商新產品
數據表:
HGTG10N120BND 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
E
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
1200 V
集電極-發射極飽和電壓：
2.45 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
17 A
Pd - 功耗：
298 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
HGTG10N120BND
打包：
管子
連續集電極電流 Ic 最大值：
35 A
高度：
20.82 mm
長度：
15.87 mm
寬度：
4.82 mm
品牌：
安森美半導體/飛兆半導體
連續集電極電流：
35 A
柵極-發射極漏電流：
+/- 250 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
第 # 部分別名：
HGTG10N120BND_NL
單位重量：
0.225401 oz
Tags
HGTG10N120BND, HGTG10N120B, HGTG10, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W
***rchild Semiconductor
HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
型號 製造商 描述 庫存 價格
HGTG10N120BND
DISTI # C1S541901484134		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		140
  • 100:$2.5900
  • 50:$2.8200
  • 10:$3.4400
  • 1:$5.3000
HGTG10N120BND
DISTI # HGTG10N120BND-ND		ON SemiconductorIGBT 1200V 35A 298W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		855In Stock
  • 1350:$2.1481
  • 900:$2.5216
  • 450:$2.7946
  • 10:$3.5560
  • 1:$3.9500
HGTG10N120BND
DISTI # HGTG10N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.6900
  • 10:€1.5900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.3900
  • 1000:€1.3900
HGTG10N120BND
DISTI # HGTG10N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 450		Asia - 0
    HGTG10N120BND
    DISTI # HGTG10N120BND    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$1.5900
    • 900:$1.5900
    • 1800:$1.5900
    • 2700:$1.4900
    • 4500:$1.4900
    HGTG10N120BND
    DISTI # 98B1928    		ON SemiconductorSINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 1:$3.7700
    • 10:$3.2200
    • 25:$3.0800
    • 50:$2.9500
    • 100:$2.8100
    • 250:$2.6800
    • 500:$2.4200
    HGTG10N120BND.
    DISTI # 16AC0004    		Fairchild Semiconductor CorporationDC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
      HGTG10N120BNDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant      		485
      • 1000:$1.8000
      • 500:$1.9000
      • 100:$1.9800
      • 25:$2.0600
      • 1:$2.2200
      HGTG10N120BNDON SemiconductorHGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
      RoHS: Compliant      		75Tube
      • 5:$2.9400
      • 25:$1.9900
      • 50:$1.8300
      • 250:$1.5100
      HGTG10N120BND
      DISTI # 512-HGTG10N120BND      		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Compliant      		29
      • 1:$3.6300
      • 10:$3.0800
      • 100:$2.6700
      • 250:$2.5400
      • 500:$2.2800
      HGTG10N120BND_Q
      DISTI # 512-HGTG10N120BND_Q      		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Not compliant      		0
        HGTG10N120BNDHarris Semiconductor 20
          HGTG10N120BND
          DISTI # HGTG10N120BND          		ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,TO247429
          • 1:$3.6000
          • 3:$3.1900
          • 10:$2.7200
          • 30:$2.3500
          • 150:$2.1300
          HGTG10N120BNDFairchild Semiconductor Corporation 
          RoHS: Compliant          		Europe - 1130
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            可用性
            庫存:
            641
            訂購:
            2624
            輸入數量:
            HGTG10N120BND的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
            參考價格（美元）
            數量
            單價
            小計金額
            1
            US$3.62
            US$3.62
            10
            US$3.07
            US$30.70
            100
            US$2.66
            US$266.00
            250
            US$2.53
            US$632.50
            500
            US$2.27
            US$1 135.00
            1000
            US$1.91
            US$1 910.00
            2500
            US$1.82
            US$4 550.00
            5000
            US$1.75
            US$8 750.00
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