We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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型號 | 製造商 | 描述 | 庫存 | 價格 |
---|---|---|---|---|
FF150R12ME3GBOSA1 DISTI # FF150R12ME3GBOSA1-ND | Infineon Technologies AG | IGBT MODULE VCES 1200V 150A RoHS: Not compliant Min Qty: 10 Container: Bulk | Limited Supply - Call |
|
FF150R12ME3G DISTI # FF150R12ME3G | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 - Bulk (Alt: FF150R12ME3G) RoHS: Compliant Min Qty: 5 Container: Bulk | Americas - 0 |
|
FF150R12ME3G DISTI # SP000317332 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 200A 11-pin ECONOD-3 (Alt: SP000317332) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
FF150R12ME3GBOSA1 DISTI # FF150R12ME3GBOSA1 | Infineon Technologies AG | MEDIUM POWER ECONO - Bulk (Alt: FF150R12ME3GBOSA1) Min Qty: 5 Container: Bulk | Americas - 0 |
|
FF150R12ME3GBOSA1 DISTI # FF150R12ME3GBOSA1 | Infineon Technologies AG | MEDIUM POWER ECONO - Trays (Alt: FF150R12ME3GBOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
FF150R12ME3G DISTI # 641-FF150R12ME3G | Infineon Technologies AG | IGBT Modules N-CH 1.2KV 200A | 7 |
|
2SP0115T2A0-FF150R12ME3G DISTI # 869-A0-FF150R12ME3G | Power Integrations | Power Management Modules 2SP0115T PI Gate Driver ONLY RoHS: Not compliant | 0 |
|
2SP0115T2B0-FF150R12ME3G DISTI # 869-B0-FF150R12ME3G | Power Integrations | Power Management Modules 2SP0115T PI Gate Driver ONLY RoHS: Not compliant | 0 |
|
DB01-FF150R12ME3G DISTI # 869-FF150R12M3G | Power Integrations | Power Management Modules DB01 RoHS: Not compliant | 0 | |
FF150R12ME3G | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 428 |
|
FF150R12ME3GBOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 140 |
|
2SD316EI-12-DB01-FF150R12ME3G DISTI # DB01-FF150R12ME | Power Integrations | PLUG-AND-PLAY IGBT DRIVER RoHS: Not Compliant | 0 |
|
圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: EYG-S0612ZLWF OMO.#: OMO-EYG-S0612ZLWF |
Thermal Interface Products Soft PGS - IGBT Mod Mitsubishi Elec. | |
Mfr.#: EYG-S0612ZLWF OMO.#: OMO-EYG-S0612ZLWF-PANASONIC |
Heat Insulating Sheet | |
Mfr.#: ISO5852SDWEVM-017 |
DEVELOPMENT INTERFACE |