IXFR200N10P

IXFR200N10P
Mfr. #:
IXFR200N10P
製造商:
Littelfuse
描述:
MOSFET 133 Amps 100V 0.0075 Rds
生命週期:
製造商新產品
數據表:
IXFR200N10P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR200N10P DatasheetIXFR200N10P Datasheet (P4-P5)
ECAD Model:
更多信息:
IXFR200N10P 更多信息
產品屬性
屬性值
製造商:
IXYS
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
133 A
Rds On - 漏源電阻:
9 mOhms
Vgs th - 柵源閾值電壓:
5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
235 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
300 W
配置:
單身的
頻道模式:
增強
商品名:
高功率場效應晶體管
打包:
管子
高度:
21.34 mm
長度:
16.13 mm
系列:
IXFR200N10
晶體管類型:
1 N-Channel
類型:
極性 HiPerFET 功率 MOSFET
寬度:
5.21 mm
品牌:
IXYS
正向跨導 - 最小值:
60 S
秋季時間:
90 ns
產品類別:
MOSFET
上升時間:
35 ns
出廠包裝數量:
30
子類別:
MOSFET
典型關斷延遲時間:
150 ns
典型的開啟延遲時間:
30 ns
單位重量:
0.056438 oz
Tags
IXFR20, IXFR2, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    W***a
    W***a
    IT

    All OK!!!!

    2019-04-06
    E**h
    E**h
    NZ

    Quick, Awesome, Many Thanks

    2019-05-06
    J***z
    J***z
    ES

    As described. We have to try.

    2019-01-21
    E***l
    E***l
    TR

    I haven't yet tried it because my arduino hasn't arrived yet.But the product looks good quality and nice.

    2019-01-24
***ark
MOSFET Transistor, N Channel, 133 A, 100 V, 9 mohm, 15 V, 5 V RoHS Compliant: Yes
***ure Electronics
Single N-Channel 100 V 300 W 235 nC Through Hole Power Mosfet - ISOPLUS247
***nell
MOSFET, N, ISOPLUS247; Transistor Polarity: N Channel; Continuous Drain Current Id: 133A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 5V; Power Dissipa
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
***ure Electronics
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 100V 130A 7mΩ 175°C TO-220 IRFB4310PBF
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 100V, 140A, 10mΩ, TO-3P
***nell
MOSFET, N-CH, 100V, 140A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 140A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB
*** Source Electronics
MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
***roFlash
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***icroelectronics
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 100 V 10.5 mO STripFET™ II MosFet - TO-220
***enic
100V 110A 312W 10.5m´Î@10V60A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***(Formerly Allied Electronics)
MOSFET N-Ch 100V 110A UltraFET II TO220
***r Electronics
Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 312W
***ark
MOSFET Transistor, N Channel, 60 A, 100 V, 9 mohm, 10 V, 4 V RoHS Compliant: Yes
***icroelectronics
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.009Ohm;ID 110A;TO-247;PD 312W;VGS +/-20V
***ure Electronics
N-Channel 100 V 0.0105 O Flange Mount STripFET™ II MOSFET - TO-247
***nell
MOSFET, N CH, 100V, 120A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
***r Electronics
Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
型號 製造商 描述 庫存 價格
IXFR200N10P
DISTI # IXFR200N10P-ND
IXYS CorporationMOSFET N-CH 100V 133A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Box
Temporarily Out of Stock
  • 30:$11.7623
IXFR200N10P
DISTI # 747-IXFR200N10P
IXYS CorporationMOSFET 133 Amps 100V 0.0075 Rds
RoHS: Compliant
147
  • 1:$14.6200
  • 10:$13.2900
  • 25:$12.2900
  • 50:$11.3100
  • 100:$11.0400
  • 250:$10.1200
  • 500:$9.1800
IXFR200N10P
DISTI # 1300096
IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant
5
  • 1:£14.4800
  • 5:£13.9500
  • 10:£11.5000
IXFR200N10P
DISTI # 1300096
IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant
5
  • 1:$23.1400
  • 10:$21.0400
  • 25:$19.4500
  • 50:$17.9000
  • 100:$17.4800
  • 250:$16.0200
  • 500:$14.5300
  • 1000:$13.2700
圖片 型號 描述
IXFR26N120P

Mfr.#: IXFR26N120P

OMO.#: OMO-IXFR26N120P

MOSFET 32 Amps 1200V 0.46 Rds
IXFR24N50

Mfr.#: IXFR24N50

OMO.#: OMO-IXFR24N50

MOSFET 22 Amps 500V 0.23 Rds
IXFR26N100P

Mfr.#: IXFR26N100P

OMO.#: OMO-IXFR26N100P

MOSFET 26 Amps 1000V 0.39 Rds
IXFR24N100Q3

Mfr.#: IXFR24N100Q3

OMO.#: OMO-IXFR24N100Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFR20N120P

Mfr.#: IXFR20N120P

OMO.#: OMO-IXFR20N120P

MOSFET 26 Amps 1200V 1 Rds
IXFR24N90P

Mfr.#: IXFR24N90P

OMO.#: OMO-IXFR24N90P

MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFR20N80Q

Mfr.#: IXFR20N80Q

OMO.#: OMO-IXFR20N80Q-IXYS-CORPORATION

MOSFET N-CH ISOPLUS247
IXFR21N100Q

Mfr.#: IXFR21N100Q

OMO.#: OMO-IXFR21N100Q-IXYS-CORPORATION

MOSFET N-CH 1KV 18A ISOPLUS247
IXFR26N50Q

Mfr.#: IXFR26N50Q

OMO.#: OMO-IXFR26N50Q-IXYS-CORPORATION

MOSFET 24 Amps 500V 0.2 Rds
IXFR20N80P

Mfr.#: IXFR20N80P

OMO.#: OMO-IXFR20N80P-IXYS-CORPORATION

MOSFET 10 Amps 800V 0.5 Rds
可用性
庫存:
72
訂購:
2055
輸入數量:
IXFR200N10P的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$14.62
US$14.62
10
US$13.29
US$132.90
25
US$12.29
US$307.25
50
US$11.31
US$565.50
100
US$11.04
US$1 104.00
250
US$10.12
US$2 530.00
500
US$9.18
US$4 590.00
1000
US$8.38
US$8 380.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
從...開始
最新產品
Top