FDP8874

Mfr. #:: FDP8874
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 30V 114A 5.3 OHM N-CH
生命週期:: 製造商新產品
數據表:: FDP8874 數據表
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更多信息:: FDP8874 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 114 A

Rds On - 漏源電阻：: 3.6 mOhms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 110 W

配置：: 單身的

頻道模式：: 增強

商品名：: 動力戰壕

打包：: 管子

高度：: 16.3 mm

長度：: 10.67 mm

系列：: FDP8874

晶體管類型：: 1 N-Channel

類型：: MOSFET

寬度：: 4.7 mm

品牌：: 安森美半導體/飛兆半導體

秋季時間：: 31 ns

產品類別：: MOSFET

上升時間：: 128 ns

出廠包裝數量：: 800

子類別：: MOSFET

典型關斷延遲時間：: 44 ns

典型的開啟延遲時間：: 10 ns

第 # 部分別名：: FDP8874_NL

單位重量：: 0.063493 oz

Tags: FDP8874, FDP887, FDP88, FDP8, FDP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP8874 描述

***emi: N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ

***Yang: Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free

***ure Electronics: Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V

***ark: RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET

***Yang: Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ

***ure Electronics: N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***ure Electronics: Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ark: MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V

***p One Stop Global: Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***(Formerly Allied Electronics): IRL3803VPBF N-channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220

***ure Electronics: Single N-Channel 30 V 5.5 mOhm 76 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

***ow.cn: Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube

***ment14 APAC: MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:470A; SMD Marking:IRL3803VPBF; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V

***emi: Power MOSFET 85 Amps, 28 Volts

***r Electronics: Power Field-Effect Transistor, 15A I(D), 60V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:28V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):6.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

FDP8874 更多信息

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

型號	製造商	描述	庫存	價格
FDP8874 DISTI # V99:2348_06300762	ON Semiconductor	30V N-CHANNEL POWERTRENCH&#174	600	10000:$0.5571 2500:$0.5880 1000:$0.6371 500:$0.8381 100:$0.9287 10:$1.2170 1:$1.5873
FDP8874 DISTI # V36:1790_06300762	ON Semiconductor	30V N-CHANNEL POWERTRENCH&#174	0
FDP8874 DISTI # FDP8874FS-ND	ON Semiconductor	MOSFET N-CH 30V 114A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	818In Stock	5600:$0.6184 3200:$0.6509 800:$0.8834 100:$1.0694 25:$1.3020 10:$1.3720 1:$1.5300
FDP8874 DISTI # 30345292	ON Semiconductor	30V N-CHANNEL POWERTRENCH&#174	600	12:$1.5873
FDP8874 DISTI # FDP8874	ON Semiconductor	Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FDP8874) RoHS: Compliant Min Qty: 391 Container: Bulk	Americas - 0	3910:$0.7899 1955:$0.8099 1173:$0.8199 782:$0.8309 391:$0.8359
FDP8874 DISTI # FDP8874	ON Semiconductor	Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8874) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€0.4779 500:€0.5149 100:€0.5579 50:€0.6079 25:€0.6689 10:€0.7439 1:€0.8369
FDP8874 DISTI # FDP8874	ON Semiconductor	Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8874) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	8000:$0.8759 4000:$0.8979 2400:$0.9099 1600:$0.9219 800:$0.9279
FDP8874 DISTI # 60J0602	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,16A I(D),TO-220AB ROHS COMPLIANT: YES	0	50000:$0.5940 24000:$0.6080 10000:$0.6250 2000:$0.6610 1000:$0.6650 100:$0.9750 10:$1.2500 1:$1.6000
FDP8874 DISTI # 512-FDP8874	ON Semiconductor	MOSFET 30V 114A 5.3 OHM N-CH RoHS: Compliant	2217	1:$1.4600 10:$1.2400 100:$0.9530 500:$0.8420 1000:$0.6650 2500:$0.5890 10000:$0.5670
FDP8874	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	2591	1000:$0.8400 500:$0.8900 100:$0.9200 25:$0.9600 1:$1.0400
FDP8874 DISTI # 6714878P	ON Semiconductor	MOSFET N-CHANNEL 30V 16A TO220AB, TU	950	500:£0.6320 250:£0.7160 50:£0.8220 25:£0.9260

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