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MRF6V14300HSR5

MRF6V14300HSR5
Mfr. #:
MRF6V14300HSR5
製造商:
NXP / Freescale
描述:
RF MOSFET Transistors VHV6 1400MHZ 50V
生命週期:
製造商新產品
數據表:
MRF6V14300HSR5 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
恩智浦
產品分類：
射頻 MOSFET 晶體管
RoHS：
Y
晶體管極性：
N通道
技術：
矽
Vds - 漏源擊穿電壓：
100 V
獲得：
18 dB
輸出功率：
39.6 W
最高工作溫度：
+ 150 C
安裝方式：
貼片/貼片
包裝/案例：
NI-780S
打包：
捲軸
配置：
單身的
工作頻率：
1.2 GHz to 1.4 GHz
系列：
MRF6V14300H
類型：
射頻功率MOSFET
品牌：
恩智浦/飛思卡爾
產品類別：
射頻 MOSFET 晶體管
出廠包裝數量：
50
子類別：
MOSFET
Vgs - 柵源電壓：
10 V
Vgs th - 柵源閾值電壓：
2.4 V
第 # 部分別名：
935313405178
單位重量：
0.115448 oz
Tags
MRF6V14300HS, MRF6V14300H, MRF6V14, MRF6V1, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
***W
RF Power Transistor,1200 to 1400 MHz, 330 W, Typ Gain in dB is 18 @ 1400 MHz, 50 V, LDMOS, SOT1793
*** Electronic Components
RF MOSFET Transistors VHV6 1400MHZ 50V
***or
RF POWER FIELD-EFFECT TRANSISTOR
***ark
VHV6 1400MHZ 300W 50V NI780S ROHS COMPLIANT: YES
***ical
Trans RF FET N-CH 3-Pin NI-780S T/R
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
***W
RF Power Transistor,960 to 1400 MHz, 10 W, Typ Gain in dB is 25 @ 1090 MHz, 50 V, LDMOS, SOT1811
*** Semiconductors SCT
Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V, PLD4L
***et
Transistor RF FET N-CH 100V 960MHz to 1400MHz 3-Pin PLD-1.5 T/R
*** Electronic Components
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***nell
RF FET, 100V, 960MHZ-1.4GHZ, PLD-1.5; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 960MHz; Operating Frequency Max: 1.4GHz; RF Transistor Case: PLD-1.5; No. of Pins: -; Operating Temperature Max: 200°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***et
Trans MOSFET N-CH 100V 41A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
ON SEMICONDUCTOR MAX809TTRG Microprocessor Support, Active-Low, Push-Pull Reset, 1V-5.5Vin, SOT-23-3
***ponent Stockers USA
41 A 100 V 0.039 ohm N-CHANNEL Si POWER MOSFET
***peria
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***ical
Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
***i-Key
TRANS LDMOS SOT1121B
型號 製造商 描述 庫存 價格
MRF6V14300HSR5
DISTI # 25967739		NXP SemiconductorsTrans RF MOSFET N-CH 3-Pin NI-780S T/R21
  • 1:$602.3100
MRF6V14300HSR5
DISTI # MRF6V14300HSR5-ND		NXP SemiconductorsFET RF 100V 1.4GHZ NI780S
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$321.3930
MRF6V14300HSR5
DISTI # MRF6V14300HSR5		Avnet, Inc.Trans MOSFET N-CH 100V 3-Pin NI-780S T/R - Tape and Reel (Alt: MRF6V14300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$320.1900
  • 100:$307.5900
  • 200:$295.5900
  • 300:$284.8900
  • 500:$279.3900
MRF6V14300HSR5Freescale SemiconductorRF Power Field-Effect Transistor
RoHS: Compliant		393
  • 1000:$289.0500
  • 500:$304.2700
  • 100:$316.7700
  • 25:$330.3500
  • 1:$355.7600
MRF6V14300HSR5
DISTI # 841-MRF6V14300HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 1400MHZ 50V
RoHS: Compliant		0
  • 1:$300.9400
  • 5:$296.3100
  • 10:$291.9000
  • 25:$285.6000
  • 50:$281.2100
MRF6V14300HSR5
DISTI # MRF6V14300HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 50:$280.0900
圖片 型號 描述
MRF6V14300HSR5

Mfr.#: MRF6V14300HSR5

OMO.#: OMO-MRF6V14300HSR5

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR5

Mfr.#: MRF6V14300HR5

OMO.#: OMO-MRF6V14300HR5

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR3

Mfr.#: MRF6V14300HR3

OMO.#: OMO-MRF6V14300HR3

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR3

Mfr.#: MRF6V14300HR3

OMO.#: OMO-MRF6V14300HR3-NXP-SEMICONDUCTORS

 FET RF 100V 1.4GHZ NI780
MRF6V14300HS

Mfr.#: MRF6V14300HS

OMO.#: OMO-MRF6V14300HS-1152

 FET RF 100V 1.4GHZ NI780S
MRF6V14300HSR3

Mfr.#: MRF6V14300HSR3

OMO.#: OMO-MRF6V14300HSR3-NXP-SEMICONDUCTORS

 FET RF 100V 1.4GHZ NI780S
MRF6V14300MSR5

Mfr.#: MRF6V14300MSR5

OMO.#: OMO-MRF6V14300MSR5-1190

 全新原裝
MRF6V14300HSR5

Mfr.#: MRF6V14300HSR5

OMO.#: OMO-MRF6V14300HSR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR5

Mfr.#: MRF6V14300HR5

OMO.#: OMO-MRF6V14300HR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 1400MHZ 50V
可用性
庫存:
Available
訂購:
1500
輸入數量:
MRF6V14300HSR5的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$300.94
US$300.94
5
US$296.31
US$1 481.55
10
US$291.90
US$2 919.00
25
US$285.60
US$7 140.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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