IPS135N03L G

IPS135N03L G
Mfr. #:
IPS135N03L G
製造商:
infineon
描述:
IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
生命週期:
製造商新產品
數據表:
IPS135N03L G 數據表
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ECAD Model:
產品屬性
屬性值
製造商
英飛凌
產品分類
FET - 單
系列
OptiMOS 3
打包
管子
部分別名
IPS135N03LGAKMA1 SP000788220
單位重量
0.139332 oz
安裝方式
通孔
商品名
優化MOS
包裝盒
IPAK-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
31 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
2 ns
上升時間
3 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
30 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
13.5 mOhms
晶體管極性
N通道
典型關斷延遲時間
12 ns
典型開啟延遲時間
3 ns
通道模式
增強
Tags
IPS135N03LG, IPS135, IPS13, IPS1, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251
***ponent Stockers USA
30 A 30 V 0.0135 ohm N-CHANNEL Si POWER MOSFET TO-251
***nell
MOSFET, N CH, 30A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 31W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 21.4ns
***ser
MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
***emi
Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 30V 8.5A 3-Pin(3+Tab) IPAK Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
***emi
Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 25V 32A 3-Pin(3+Tab) IPAK Rail - Rail/Tube
***ser
MOSFETs- Power and Small Signal 25V 62A N-Channel
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:62A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:58W ;RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
IPS135N03LGAKMA1
DISTI # IPS135N03LGAKMA1-ND
Infineon Technologies AGMOSFET N-CH 30V 30A TO251-3
RoHS: Compliant
Min Qty: 1500
Container: Tube
Limited Supply - Call
    IPS135N03L G
    DISTI # 726-IPS135N03LG
    Infineon Technologies AGMOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
    RoHS: Compliant
    0
      IPS135N03LGInfineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
      RoHS: Compliant
      2861
      • 1000:$0.1800
      • 100:$0.1900
      • 500:$0.1900
      • 25:$0.2000
      • 1:$0.2200
      圖片 型號 描述
      IPS135N03L

      Mfr.#: IPS135N03L

      OMO.#: OMO-IPS135N03L-1190

      全新原裝
      IPS135N03LG

      Mfr.#: IPS135N03LG

      OMO.#: OMO-IPS135N03LG-1190

      Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
      IPS135N03LGAKMA1

      Mfr.#: IPS135N03LGAKMA1

      OMO.#: OMO-IPS135N03LGAKMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 30V 30A TO251-3
      IPS135N03L G

      Mfr.#: IPS135N03L G

      OMO.#: OMO-IPS135N03L-G-126

      IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
      可用性
      庫存:
      Available
      訂購:
      2000
      輸入數量:
      IPS135N03L G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.23
      US$0.23
      10
      US$0.22
      US$2.16
      100
      US$0.21
      US$20.51
      500
      US$0.19
      US$96.85
      1000
      US$0.18
      US$182.30
      從...開始
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