FF400R12KE3HOSA1

Mfr. #:: FF400R12KE3HOSA1
製造商:: Infineon Technologies
描述:: IGBT MODULE 1200V 400A
生命週期:: 製造商新產品
數據表:: FF400R12KE3HOSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FF400R12KE3HOSA1 Datasheet FF400R12KE3HOSA1 Datasheet (P4-P6)FF400R12KE3HOSA1 Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

Tags: FF400R12KE3, FF400R12KE, FF400R12, FF400R1, FF400, FF40, FF4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF400R12KE3HOSA1 描述

***p One Stop Japan: Trans IGBT Module N-CH 1200V 580A 2000000mW 7-Pin 62MM-1 Tray

***trelec: IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.15 V Energy dissipation during make-time: 25 mJ Energy dissipation during turn-off time: 62 mJ

***ark: Igbt, Module, N-Ch, 1.2Kv, 580A; Transistor Polarity:n Channel; Dc Collector Current:580A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:2Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ineon: Our well-known 62 mm 1200V dual IGBT modules with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency Diode are the right choice for your design. | Summary of Features: PrimeSTACKs available for fast development with minimum effort; Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

Market price

型號	製造商	描述	庫存	價格
FF400R12KE3HOSA1 DISTI # V99:2348_17558253	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 580A 2000000mW 7-Pin Tray RoHS: Compliant	0
FF400R12KE3HOSA1 DISTI # V36:1790_17558253	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 580A 2000000mW 7-Pin Tray RoHS: Compliant	0	10:$127.2600
FF400R12KE3HOSA1 DISTI # FF400R12KE3HOSA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 400A RoHS: Compliant Min Qty: 1 Container: Bulk	20In Stock	1:$155.1300
FF400R12KE3HOSA1 DISTI # FF400R12KE3HOSA1	Infineon Technologies AG	MEDIUM POWER 62MM - Trays (Alt: FF400R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$131.5900 60:$134.7900 40:$138.1900 20:$141.7900 10:$143.6900
FF400R12KE3HOSA1 DISTI # 13AC8654	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 580A,Transistor Polarity:N Channel,DC Collector Current:580A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:2kW,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	1	1:$156.6800
FF400R12KE3 DISTI # 641-FF400R12KE3	Infineon Technologies AG	IGBT Modules 1200V 400A DUAL HALF BRIDGE RoHS: Compliant	0	1:$158.4000 5:$154.5800 10:$150.7500 25:$148.6300
FF400R12KE3HOSA1 DISTI # FF400R12KE3	Infineon Technologies AG	IGBT/IGBT 1200V 580A 62MM-1 RoHS: Compliant	10	1:€141.3000 3:€131.3000 10:€126.3000 20:€121.6200
FF400R12KE3HOSA1 DISTI # 2726138	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 580A RoHS: Compliant	1	1:$236.7200
FF400R12KE3HOSA1 DISTI # 2726138	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 580A	1	10:£109.0000 5:£112.0000 1:£114.0000

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