STGWA60H65DFB

Mfr. #:: STGWA60H65DFB
製造商:: STMicroelectronics
描述:: IGBT BIPO 650V 60A TO247-3
生命週期:: 製造商新產品
數據表:: STGWA60H65DFB 數據表
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更多信息:: STGWA60H65DFB 更多信息 STGWA60H65DFB Product Details

產品屬性
屬性值

製造商: 意法半導體

產品分類: IGBT - 單

系列: 600-650V IGBTs

打包: 管子

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-247 Long Leads

配置: 單身的

最大功率: 375W

反向恢復時間trr: 60ns

電流收集器 Ic-Max: 80A

電壓收集器發射極擊穿最大值: 650V

IGBT型: 海溝場停止

電流收集器脈衝Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 60A

開關能源: 1.59mJ (on), 900μJ (off)

柵極電荷: 306nC

Td-on-off-25°C: 66ns/210ns

測試條件: 400V, 60A, 10 Ohm, 15V

鈀功耗: 375 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

集電極-發射極-電壓-VCEO-Max: 650 V

集電極-發射極-飽和-電壓: 2 V

25-C 時的連續集電極電流: 80 A

柵極-發射極-漏電流: 250 nA

最大柵極發射極電壓: +/- 20 V

連續集電極電流 Ic-Max: 80 A

Tags: STGWA, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWA60H65DFB 描述

***ical: Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube

***ronik: IGBT 650V 60A 1,85V TO247 long

***i-Key: IGBT BIPO 650V 60A TO247-3

***ark: Ptd High Voltage

STGWA60H65DFB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型號	製造商	描述	庫存	價格
STGWA60H65DFB DISTI # V99:2348_17623306	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	595	1000:$2.7519 500:$3.2930 100:$3.8850 10:$4.4330 1:$5.7783
STGWA60H65DFB DISTI # 497-16006-5-ND	STMicroelectronics	IGBT BIPO 650V 60A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	86In Stock	2520:$2.8000 510:$3.4860 120:$4.0950 30:$4.7250 10:$4.9980 1:$5.5700
STGWA60H65DFB DISTI # 32341623	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	595	3:$5.7783
STGWA60H65DFB DISTI # STGWA60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGWA60H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€2.2900 500:€2.4900 100:€2.5900 50:€2.6900 25:€2.7900 10:€2.8900 1:€3.1900
STGWA60H65DFB DISTI # STGWA60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGWA60H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$2.4900 3600:$2.5900 2400:$2.6900 1200:$2.7900 600:$2.8900
STGWA60H65DFB DISTI # 26Y5801	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$2.6000 250:$2.6800 100:$3.2000 50:$3.7000 25:$3.9400 10:$4.5000 1:$5.2000
STGWA60H65DFB DISTI # 511-STGWA60H65DFB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed RoHS: Compliant	633	1:$5.2900 10:$4.5000 100:$3.9000 250:$3.7000 500:$3.3200 1000:$2.8000 2500:$2.6600
STGWA60H65DFB DISTI # IGBT1887	STMicroelectronics	IGBT 650V 60A 1,85V TO247 long RoHS: Compliant	Stock DE - 5Stock HK - 0Stock US - 0	30:$3.4900 60:$3.2700 90:$3.2200 150:$3.1600 240:$2.9800

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	Mfr.#: STGWA60V60DF OMO.#: OMO-STGWA60V60DF-STMICROELECTRONICS	IGBT BIPO 600V 60A TO247-3
	Mfr.#: STGWA60H65DFB OMO.#: OMO-STGWA60H65DFB-STMICROELECTRONICS	IGBT BIPO 650V 60A TO247-3