ZXMN6A11DN8TA

Mfr. #:: ZXMN6A11DN8TA
製造商:: Diodes Incorporated
描述:: MOSFET Dl 60V N-Chnl UMOS
生命週期:: 製造商新產品
數據表:: ZXMN6A11DN8TA 數據表
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更多信息:: ZXMN6A11DN8TA 更多信息

產品屬性
屬性值

製造商：: 二極管公司

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SO-8

通道數：: 2 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 60 V

Id - 連續漏極電流：: 3.2 A

Rds On - 漏源電阻：: 180 mOhms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2.1 W

配置：: 雙重的

頻道模式：: 增強

打包：: 捲軸

高度：: 1.5 mm

長度：: 5 mm

系列：: ZXMN6A111

晶體管類型：: 2 N-Channel

類型：: MOSFET

寬度：: 4 mm

品牌：: 二極管公司

秋季時間：: 4.6 ns

產品類別：: MOSFET

上升時間：: 3.5 ns

出廠包裝數量：: 500

子類別：: MOSFET

典型關斷延遲時間：: 8.2 ns

典型的開啟延遲時間：: 1.95 ns

單位重量：: 0.002610 oz

Tags: ZXMN6A11DN8TA, ZXMN6A11DN8T, ZXMN6A11DN, ZXMN6A11D, ZXMN6A1, ZXMN6A, ZXMN6, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN6A11DN8TA 描述

***ure Electronics: ZXMN6A11DN8 Series Dual N-Channel 60 V 0.12 Ohm Power MOSFET SMT - SOIC-8

***C: Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R

***ment14 APAC: MOSFET, DUAL, N, 60V, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.2A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:13.7A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V

***Yang: Transistor MOSFET Array Dual N-CH 60V 3.5A 8-Pin SOIC T/R - Tape and Reel

***emi: N-Channel PowerTrench® MOSFET, 60V, 3.5A, 100mΩ

***ure Electronics: Dual N-Channel 60 V 2 W 13 nC PowerTrench Surface Mount Mosfet - SOIC-8

***rchild Semiconductor: These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***emi: Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ

***Yang: Transistor MOSFET Array Dual N-CH 60V 3.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r

***ure Electronics: Dual N-Channel 60 V 0.3 Ohm 30 nC 2 W DMOS Surface Mount Mosfet - SOIC-8

***ark: Dual Mosfet, Dual N Channel, 3.5 A, 60 V, 100 Mohm, 10 V, 1.7 V Rohs Compliant: Yes

***ment14 APAC: Transistor, MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Source Voltage Vds:60V; On Resistance Rds(on):0.1ohm;

***rchild Semiconductor: SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***nell: TRANSISTOR, MOSFET; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V

***et: Transistor MOSFET Array Dual N-CH 60V 3.8A 8-Pin SOIC T/R

***ponent Sense: Trans MOSFET N-CH 60V 3.8A 8-Pin SOIC N T/R - Tape and Reel

***ter Electronics: 60V,3.5A,105 OHM, DUAL NCH LOGIC LEVEL ULTRAFET POWER MOSFET

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

*** Source Electronics: N-Channel Dual MOSFET | MOSFET 2N-CH 62V 3.6A 8-SOIC

***Yang: MOSFET 62V N-Channel PowerTrench - Bulk

***el Electronic: IC WHITE LED DRIVER 24SSOP

***i-Key Marketplace: N-CHANNEL POWER MOSFET

***C: Trans MOSFET P-CH 60V 3.9A 8-Pin SOIC T/R Trans MOSFET P-CH 60V 3.9A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 60 V 0.085 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: No

***(Formerly Allied Electronics): IRF7343PBF Dual N/P-channel MOSFET Transistor; 3.4 A; 4.7 A; 55 V; 8-Pin SOIC

***ure Electronics: Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8

***id Electronics: Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF

***ineon SCT: 55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P

ZXMN6A11DN8TA 更多信息

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

型號	製造商	描述	庫存	價格
ZXMN6A11DN8TA DISTI # V36:1790_06708109	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	24500	500:$0.3894
ZXMN6A11DN8TA DISTI # V72:2272_06708109	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	625	500:$0.4144 250:$0.4189 100:$0.4233 25:$0.6263 10:$0.6521 1:$0.8068
ZXMN6A11DN8TA DISTI # ZXMN6A11DN8CT-ND	Diodes Incorporated	MOSFET 2N-CH 60V 2.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6580In Stock	100:$0.6883 10:$0.8920 1:$1.0200
ZXMN6A11DN8TA DISTI # ZXMN6A11DN8TR-ND	Diodes Incorporated	MOSFET 2N-CH 60V 2.5A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	6500In Stock	500:$0.4950
ZXMN6A11DN8TA DISTI # 29474021	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	24500	500:$0.3894
ZXMN6A11DN8TA DISTI # 27607419	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	625	500:$0.4144 250:$0.4189 100:$0.4233 28:$0.6263
ZXMN6A11DN8TA DISTI # ZXMN6A11DN8TA	Diodes Incorporated	Trans MOSFET N-CH 60V 3.2A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN6A11DN8TA) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$0.2699 1000:$0.2569 2000:$0.2449 3000:$0.2329 5000:$0.2279
ZXMN6A11DN8TA DISTI # 62M1304	Diodes Incorporated	MOSFET, N CHANNEL, DUAL, 60V, 3.2A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	50	1:$0.8710 10:$0.7310 25:$0.6490 50:$0.5690 100:$0.4870
ZXMN6A11DN8TA DISTI # 70438840	Diodes Incorporated	MOSFET Dual N-Channel 60V 3.2A SOIC8 RoHS: Compliant	0	25:$0.7200 50:$0.6300 100:$0.5600 250:$0.5000
ZXMN6A11DN8TA DISTI # 522-ZXMN6A11DN8TA	Diodes Incorporated	MOSFET Dl 60V N-Chnl UMOS RoHS: Compliant	966	1:$0.8400 10:$0.6980 100:$0.4500
ZXMN6A11DN8TA	Zetex / Diodes Inc		11111
ZXMN6A11DN8TA DISTI # 1471151	Diodes Incorporated	MOSFET, DUAL, N, 60V, SO-8 RoHS: Compliant	50	1:$1.3400 10:$1.1100 100:$0.7120 500:$0.7120
ZXMN6A11DN8TA DISTI # C1S205700295822	Diodes Incorporated	Trans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	24500	500:$0.3894
ZXMN6A11DN8TA DISTI # C1S205700117843	Diodes Incorporated	Trans MOSFET N-CH 60V 3.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	625	250:$0.4189 100:$0.4233 25:$0.6263 10:$0.6521
ZXMN6A11DN8TA-79 DISTI # C1S205700590019	Diodes Incorporated	Unclassified	2000	1000:$0.3390 500:$0.3690
ZXMN6A11DN8TA DISTI # 1471151	Diodes Incorporated	MOSFET, DUAL, N, 60V, SO-8 RoHS: Compliant	92	5:£0.6170 25:£0.5320 100:£0.3370 250:£0.3310 500:£0.3240

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