IXTN600N04T2

Mfr. #:: IXTN600N04T2
製造商:: Littelfuse
描述:: Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
生命週期:: 製造商新產品
數據表:: IXTN600N04T2 數據表
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更多信息:: IXTN600N04T2 更多信息

產品屬性
屬性值

製造商: IXYS

產品分類: 橋式整流器

系列: IXTN600N04

類型: TrenchT2 GigaMOS

打包: 管子

單位重量: 1.340411 oz

安裝方式: 貼片/貼片

商品名: 高功率場效應晶體管

包裝盒: SOT-227B

鈀功耗: 940 W

輸出電流: 600 A

秋季時間: 250 ns

上升時間: 20 ns

Tags: IXTN6, IXTN, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTN600N04T2 描述

***ure Electronics: N-Channel 40 V 600 A 1.05 mO Chassis Mount GigaMOS TrenchT2 Mosfet - SOT-227B

***ical: Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B

IXTN600N04T2 更多信息

GigaMOS™ TrenchT2™ Power MOSFETs: IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.

Market price

型號	製造商	描述	庫存	價格
IXTN600N04T2 DISTI # V99:2348_15878365	IXYS Corporation	Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B RoHS: Compliant	2	500:$15.5400 200:$16.3600 100:$17.7500 50:$18.3800 25:$19.2500 10:$20.8500 5:$21.9300 1:$22.7000
IXTN600N04T2 DISTI # IXTN600N04T2-ND	IXYS Corporation	MOSFET N-CH 40V 600A SOT-227 RoHS: Compliant Min Qty: 1 Container: Tube	370In Stock	100:$21.7771 10:$25.4990 1:$27.5700
IXTN600N04T2 DISTI # 27158570	IXYS Corporation	Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B RoHS: Compliant	26	500:$16.5984 200:$17.4432 100:$19.0080 50:$19.5744 25:$20.4480 10:$22.2528 5:$23.3664 1:$24.0576
IXTN600N04T2 DISTI # 27472446	IXYS Corporation	Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B RoHS: Compliant	2	1:$22.7000
IXTN600N04T2 DISTI # 747-IXTN600N04T2	IXYS Corporation	Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant	449	1:$25.0600 5:$24.3400 10:$23.1800 25:$21.3000 50:$20.3900 100:$19.8000 200:$18.1700
IXTN600N04T2 DISTI # C1S331700073039	IXYS Corporation	Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B RoHS: Compliant	26	25:$26.5000 10:$28.7000 5:$31.2000 1:$38.0000

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圖片	型號	描述
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	Mfr.#: IXTN600N04T2 OMO.#: OMO-IXTN600N04T2-IXYS-CORPORATION	Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
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