IRFH5010TR2PBF

Mfr. #:: IRFH5010TR2PBF
製造商:: Infineon / IR
描述:: MOSFET MOSFT 100V 100A 9.0mOhm 65nC Qg
生命週期:: 製造商新產品
數據表:: IRFH5010TR2PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: PQFN-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 100 V

Id - 連續漏極電流：: 13 A

Rds On - 漏源電阻：: 9 mOhms

Vgs th - 柵源閾值電壓：: 4 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 65 nC

最高工作溫度：: + 150 C

Pd - 功耗：: 3.6 W

配置：: 單身的

打包：: 捲軸

高度：: 0.83 mm

長度：: 6 mm

晶體管類型：: 1 N-Channel

寬度：: 5 mm

品牌：: 英飛凌/紅外

正向跨導 - 最小值：: 206 S

秋季時間：: 8.6 ns

產品類別：: MOSFET

上升時間：: 12 ns

出廠包裝數量：: 400

子類別：: MOSFET

第 # 部分別名：: SP001570754

Tags: IRFH5010, IRFH501, IRFH50, IRFH5, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH5010TR2PBF 描述

***ernational Rectifier: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package

***ied Electronics & Automation: MOSFET, 100V, 100A, 9.0 mOhm, 65 nC Qg, PQFN 5x6

***et Europe: Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R

***o-Tech: MOSFET N-Channel 100V 13A PQFN8EP

***trelec: MOSFET PQFN-8 (5x6) N 100V 13 A

***i-Key: MOSFET N-CH 100V 13A 5X6 PQFN

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes

***nell: MOSFET,N CH,100V,13A,PQFN56; Drain Source Voltage Vds:100V; On State Resistance:7.5mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:250W; Transistor Case Style:QFN; No. of Pins:8; Current Id Max:100A; Operating Temperature Range:-55°C to +150°C; Transistor Polarity:N Channel

***ment14 APAC: MOSFET,N CH,100V,13A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:250W; Voltage Vgs Max:20V

Market price

型號	製造商	描述	庫存	價格
IRFH5010TR2PBF DISTI # IRFH5010TR2PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 100V 13A 5X6 PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRFH5010TR2PBF DISTI # IRFH5010TR2PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 13A 5X6 PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRFH5010TR2PBF DISTI # 70019267	Infineon Technologies AG	IRFH5010TR2PBF N-channel MOSFET Transistor,100 A,100 V,8-Pin PQFN RoHS: Compliant	0	400:$1.9700 800:$1.9310 2000:$1.8720 4000:$1.7930 10000:$1.6750
IRFH5010TR2PBF DISTI # 942-IRFH5010TR2PBF	Infineon Technologies AG	MOSFET MOSFT 100V 100A 9.0mOhm 65nC Qg RoHS: Compliant	0

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