IXTQ44N50P

Mfr. #:: IXTQ44N50P
製造商:: Littelfuse
描述:: MOSFET 44 Amps 500V 0.14 Ohm Rds
生命週期:: 製造商新產品
數據表:: IXTQ44N50P 數據表
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HTML Datasheet:: IXTQ44N50P Datasheet IXTQ44N50P Datasheet (P4-P5)
ECAD Model:

產品屬性
屬性值

製造商：: IXYS

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-3P-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 500 V

Id - 連續漏極電流：: 44 A

Rds On - 漏源電阻：: 140 mOhms

Vgs - 柵源電壓：: 30 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 650 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 20.3 mm

長度：: 15.8 mm

系列：: IXTQ44N50

晶體管類型：: 1 N-Channel

寬度：: 4.9 mm

品牌：: IXYS

秋季時間：: 21 ns

產品類別：: MOSFET

上升時間：: 27 ns

出廠包裝數量：: 30

子類別：: MOSFET

典型關斷延遲時間：: 75 ns

典型的開啟延遲時間：: 25 ns

單位重量：: 0.194007 oz

Tags: IXTQ44, IXTQ4, IXTQ, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXTQ44N50P 描述

*** Electronics: MOSFET N-CH 500V 44A TO-3P

***el Nordic: Contact for details

***nell: MOSFET, N, TO-3P; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:44A; Resistance, Rds On:0.14ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination Type:Through Hole; N-channel Gate Charge:98nC; No. of Pins:3; Power, Pd:650W; Thermal Resistance, Junction to Case A:0.19°C/W; Typ Capacitance Ciss:5440pF; Voltage, Vds Max:500V; Time, trr Max:400ns

***emi: N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P

*** Source Electronics: Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P

***nell: MOSFET, N-CH, 500V, 48A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ure Electronics: Single N-Channel 500 V 0.105 Ohm 137 nC 625 W Flange Mount Mosfet - TO-247-3

***emi: N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247

***el Electronic: N-Channel UniFETTM FRFET® MOSFET 500V, 45A, 120mΩ, TO-247 3L, 3600-RAIL

*** Stop Electro: Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***icroelectronics: N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package

***eco: Transistor MOSFET N-Channel 500 Volt 45A 3-Pin(3+Tab) TO-247

***ure Electronics: N-Channel 500 V 0.1 O 87 nC Flange Mount MDmesh Power Mosfet - TO-247

***r Electronics: Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***nell: MOSFET, N CH, 550V, 45A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

***p One Stop: Trans MOSFET N-CH 560V 32A 3-Pin(3+Tab) TO-247 Tube

***ment14 APAC: MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:560V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:284W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:32A; Current Id Max:32A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:284W; Power Dissipation Pd:284W; Power Dissipation Ptot Max:284W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds:560V; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.9V

***ineon: Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***p One Stop Global: Trans MOSFET N-CH 600V 46A 3-Pin(3+Tab) TO-247 Tube

***el Electronic: IC SUPERVISOR 2 CHANNEL SOT23-5

***S: French Electronic Distributor since 1988

Market price

型號	製造商	描述	庫存	價格
IXTQ44N50P DISTI # IXTQ44N50P-ND	IXYS Corporation	MOSFET N-CH 500V 44A TO-3P RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$7.8700
IXTQ44N50P DISTI # 747-IXTQ44N50P	IXYS Corporation	MOSFET 44 Amps 500V 0.14 Ohm Rds RoHS: Compliant	35	1:$10.0300 10:$9.0300 25:$7.5100 50:$6.9800 100:$6.8200 250:$6.2300 500:$5.6800 1000:$5.4200

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