We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IHW30N160R2FKSA1 DISTI # V36:1790_06378532 | Infineon Technologies AG | Trans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 7503 |
|
| IHW30N160R2FKSA1 DISTI # IHW30N160R2FKSA1-ND | Infineon Technologies AG | IGBT 1600V 60A 312W TO247-3 Min Qty: 1 Container: Tube | Limited Supply - Call | |
| IHW30N160R2FKSA1 DISTI # 32439532 | Infineon Technologies AG | Trans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 7503 |
|
| IHW30N160R2FKSA1 DISTI # 34417653 | Infineon Technologies AG | Trans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 240 |
|
| IHW30N160R2XK DISTI # IHW30N160R2FKSA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 1.6KV 60A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW30N160R2FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube | Americas - 0 | |
| IHW30N160R2FKSA1 DISTI # 13T9432 | Infineon Technologies AG | IGBT+ DIODE, 1.6KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:312W,Collector Emitter Voltage V(br)ceo:1.6kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| IHW30N160R2 DISTI # 726-IHW30N160R2 | Infineon Technologies AG | IGBT Transistors RC-IGBT MONO DIODE 1600V 30A RoHS: Compliant | 1264 |
|
| IHW30N160R2FKSA1 DISTI # 726-IHW30N160R2FKSA1 | Infineon Technologies AG | IGBT Transistors RC-IGBT MONO DIODE 1600V 30A RoHS: Compliant | 2024 |
|
| IHW30N160R2FKSA1 DISTI # 7528334 | Infineon Technologies AG | Infineon IHW30N160R2FKSA1 IGBT, 60 A 1600 V, 3-Pin TO-247, EA Min Qty: 1 Container: Bulk | 0 |
|
| IHW30N160R2FKSA1 DISTI # 1832388 | Infineon Technologies AG | IGBT+ DIODE,1600V,30A,TO247 RoHS: Compliant | 4322 |
|
| IHW30N160R2FKSA1 DISTI # 1832388 | Infineon Technologies AG | IGBT+ DIODE,1600V,30A,TO247 RoHS: Compliant | 4334 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IHW30N120R3 OMO.#: OMO-IHW30N120R3 |
IGBT Transistors IGBT PRODUCTS TrenchStop RC |
|
|
Mfr.#: IHW30N135R3 OMO.#: OMO-IHW30N135R3 |
IGBT Transistors IGBT PRODUCTS TrenchStop RC |
|
Mfr.#: IHW30N60TFKSA1 OMO.#: OMO-IHW30N60TFKSA1 |
IGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. |
|
Mfr.#: IHW30N100R OMO.#: OMO-IHW30N100R |
IGBT Transistors REVERSE CONDUCT IGBT 1000V 30A |
|
Mfr.#: IHW30N120R3FKSA1 |
IGBT 1200V 60A 349W TO247-3 |
|
|
Mfr.#: IHW30N100R |
IGBT 1000V 60A 412W TO247-3 |
|
Mfr.#: IHW30N135R3 OMO.#: OMO-IHW30N135R3-1190 |
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247 - Bulk (Alt: IHW30N135R3) |
|
|
Mfr.#: IHW30N60 OMO.#: OMO-IHW30N60-1190 |
全新原裝 |
|
|
Mfr.#: IHW30R135R3 OMO.#: OMO-IHW30R135R3-1190 |
全新原裝 |
|
|
Mfr.#: IHW30T60 OMO.#: OMO-IHW30T60-1190 |
全新原裝 |