OMO ElectronicOMO Electronic
Expand menu
0 購物車

IXTR48P20P

IXTR48P20P
Mfr. #:
IXTR48P20P
製造商:
Littelfuse
描述:
MOSFET -30.0 Amps -200V 0.093 Rds
生命週期:
製造商新產品
數據表:
IXTR48P20P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTR48P20P DatasheetIXTR48P20P Datasheet (P4-P5)
ECAD Model:
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
30 A
Rds On - 漏源電阻：
93 mOhms
打包：
管子
系列：
IXTR48P20
品牌：
IXYS
產品類別：
MOSFET
出廠包裝數量：
30
子類別：
MOSFET
單位重量：
0.186952 oz
Tags
IXTR, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 200V 30A 3-Pin(3+Tab) ISOPLUS 247
***i-Key
MOSFET P-CH 200V 30A ISOPLUS247
***i-Key
MOSFET N-CH 200V 34A TO-3P
***ser
MOSFETs 200V N-Ch QFET Logic Level
***emi
Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247
***(Formerly Allied Electronics)
TRIAC, Power MOSFET, TO-247, 600 V, N, 200 VDC, 200 VDC, 50 mA (Max.), 32 A
***r Electronics
Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE
***ure Electronics
Single N-Channel 250 V 0.075 Ohms Flange Mount Power Mosfet - TO-247AC
***klin Elektronik
SILICONIX THT MOSFET NFET 250V 38A 75mΩ 150°C TO-247 IRFP264-PBF
*** Source Electronics
Trans MOSFET N-CH 250V 38A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 250V 38A TO-247AC
*** Stop Electro
Power Field-Effect Transistor, 38A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N, 250V, 38A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:38A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:150A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds Max:250V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 200 V 0.082 Ohm 107 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 31A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:124A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 78 nC 180 W DMOS Flange Mount Mosfet - TO-220-3
***et Europe
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail
***r Electronics
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET,N CH,200V,31A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +105°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Power Dissipation Pd:180W; Voltage Vgs Max:30V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F
***ure Electronics
FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP
***Yang
Trans MOSFET N-CH 200V 39A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***enic
200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
型號 製造商 描述 庫存 價格
IXTR48P20P
DISTI # IXTR48P20P-ND		IXYS CorporationMOSFET P-CH 200V 30A ISOPLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		12In Stock
  • 510:$7.4679
  • 120:$8.9133
  • 30:$9.8770
  • 1:$12.0500
IXTR48P20P
DISTI # 747-IXTR48P20P		IXYS CorporationMOSFET -30.0 Amps -200V 0.093 Rds
RoHS: Compliant		0
  • 30:$9.4300
  • 60:$8.7600
  • 120:$8.5600
  • 270:$7.8200
  • 510:$7.1300
  • 1020:$6.8000
圖片 型號 描述
IXTR40P50P

Mfr.#: IXTR40P50P

OMO.#: OMO-IXTR40P50P

 MOSFET -22.0 Amps -500V 0.260 Rds
IXTR48P20P

Mfr.#: IXTR48P20P

OMO.#: OMO-IXTR48P20P

 MOSFET -30.0 Amps -200V 0.093 Rds
IXTR48P20P

Mfr.#: IXTR48P20P

OMO.#: OMO-IXTR48P20P-IXYS-CORPORATION

 Darlington Transistors MOSFET -30.0 Amps -200V 0.093 Rds
IXTR40P50P

Mfr.#: IXTR40P50P

OMO.#: OMO-IXTR40P50P-IXYS-CORPORATION

 MOSFET -22.0 Amps -500V 0.260 Rds
可用性
庫存:
Available
訂購:
4000
輸入數量:
IXTR48P20P的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
30
US$9.43
US$282.90
60
US$8.76
US$525.60
120
US$8.56
US$1 027.20
270
US$7.82
US$2 111.40
510
US$7.13
US$3 636.30
1020
US$6.80
US$6 936.00
從...開始
最新產品
More Newest Products
Top