RJH60D2DPP-M0#T2

Mfr. #:: RJH60D2DPP-M0#T2
製造商:: Renesas Electronics
描述:: IGBT Transistors IGBT
生命週期:: 製造商新產品
數據表:: RJH60D2DPP-M0#T2 數據表
交貨:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: RJH60D2DPP-M0#T2 Datasheet RJH60D2DPP-M0#T2 Datasheet (P4-P6)RJH60D2DPP-M0#T2 Datasheet (P7-P9)RJH60D2DPP-M0#T2 Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商：: 瑞薩電子

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

打包：: 管子

品牌：: 瑞薩電子

濕氣敏感：: 是的

產品類別：: IGBT晶體管

出廠包裝數量：: 1

子類別：: IGBT

Tags: RJH60D2DPP-M, RJH60D2DPP, RJH60D2D, RJH60D2, RJH60D, RJH60, RJH6, RJH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH60D2DPP-M0#T2 描述

***ical: Trans IGBT Chip N-CH 600V 25A 34000mW 3-Pin(3+Tab) TO-220FL Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, HIGH SPEED, 600V, 25A TO-220FL; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 34W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FL; No. of

***p One Stop Global: Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220F Tube

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.

***ow.cn: Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-220F-3FS Tube

*** Electronics: ON SEMICONDUCTOR NGTB15N60R2FG IGBT Single Transistor, 24 A, 1.85 V, 54 W, 600 V, TO-220F, 3 Pins

***ark: Igbt, Single, 600V, 24A, To-220F-3; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:54W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB15N60R2FG

*** Source Electronics: Trans IGBT Chip N-CH 600V 30A 178000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 30A 178W TO220-3

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.

***ical: Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: STGF15Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 15 A high speed

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins:

***p One Stop: Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220 Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 15 A high speed

***ure Electronics: STGP Series 600 V 30 A 24.5 ns t(on) Trench Gate Field-Stop IGBT - TO-220-3

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***et: Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220FL Tube

***ronik: IGBT 600V 20A 2.5V TO220-3 RoHSconf

***nell: IGBT, HIGH SPEED, 600V, 20A TO-220FL; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FL; No. of

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