A2G35S200-01SR3

Mfr. #:: A2G35S200-01SR3
製造商:: NXP / Freescale
描述:: RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
生命週期:: 製造商新產品
數據表:: A2G35S200-01SR3 數據表
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HTML Datasheet:: A2G35S200-01SR3 Datasheet A2G35S200-01SR3 Datasheet (P4-P6)A2G35S200-01SR3 Datasheet (P7-P9)A2G35S200-01SR3 Datasheet (P10)
ECAD Model:
更多信息:: A2G35S200-01SR3 更多信息

產品屬性
屬性值

製造商：: 馬科姆

產品分類：: 射頻放大器

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: PQFN-20

類型：: 2-Stage Amplifier

工作頻率：: 2.5 GHz to 3.5 GHz

獲得：: 27 dB

工作電源電壓：: 11 V

工作電源電流：: 25 mA

最高工作溫度：: + 85 C

打包：: 捲軸

品牌：: 馬科姆

產品類別：: 射頻放大器

出廠包裝數量：: 500

子類別：: 無線和射頻集成電路

Tags: A2G3, A2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2G35S200-01SR3 描述

***ark: AIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 40 W AVG., 48 V, REEL 13" Q1 NDP, TR

***W: RF Power Transistor,3400 to 3600 MHz, 180 W, Typ Gain in dB is 16.1 @ 3500 MHz, 48 V, GaN, SOT1828

***et: RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast

A2G35S200-01SR3 更多信息

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

RF Power GaN Portfolio: NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.

Market price

型號	製造商	描述	庫存	價格
A2G35S200-01SR3 DISTI # 568-15206-1-ND	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	246In Stock	10:$134.7860 1:$141.4800
A2G35S200-01SR3 DISTI # 568-15206-6-ND	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 1 Container: Digi-Reel®	246In Stock	10:$134.7860 1:$141.4800
A2G35S200-01SR3 DISTI # 568-15206-2-ND	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$123.4358
A2G35S200-01SR3 DISTI # 01AC8235	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR, 3400-3800 MHZ, 40 W AVG., 48 V	0	100:$116.0200 50:$123.4400 25:$125.3000 10:$127.1500 5:$130.8600 1:$134.5800
A2G35S200-01SR3 DISTI # 841-A2G35S200-01SR3	NXP Semiconductors	RF Amplifier A2G35S200-01S/CFM2F///REEL 13 Q1 NDP RoHS: Compliant	0	250:$139.2100