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IPB320N20N3 G

IPB320N20N3 G
Mfr. #:
IPB320N20N3 G
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
生命週期:
製造商新產品
數據表:
IPB320N20N3 G 數據表
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ECAD Model:
更多信息:
IPB320N20N3 G 更多信息
產品屬性
屬性值
Tags
IPB320N20N3G, IPB320, IPB32, IPB3, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB320N20N3G
DISTI # 30577587		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
RoHS: Compliant		98
  • 8:$3.1625
IPB320N20N3G
DISTI # 30580280		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
RoHS: Compliant		17
  • 9:$2.9625
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.3789
  • 2000:$1.4328
  • 1000:$1.5082
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$1.8420
  • 100:$2.1638
  • 10:$2.6410
  • 1:$2.9400
IPB320N20N3GATMA1
DISTI # IPB320N20N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 34A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$1.8420
  • 100:$2.1638
  • 10:$2.6410
  • 1:$2.9400
IPB320N20N3GATMA1
DISTI # V72:2272_06382940		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB320N20N3GATMA1
    DISTI # V36:1790_06382940    		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 1000000:$1.1950
    • 500000:$1.1970
    • 100000:$1.3070
    • 10000:$1.4800
    • 1000:$1.5080
    IPB320N20N3GATMA1
    DISTI # IPB320N20N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB320N20N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 4000:$1.2900
    • 6000:$1.2900
    • 10000:$1.2900
    • 1000:$1.3900
    • 2000:$1.3900
    IPB320N20N3GATMA1
    DISTI # SP000691172    		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin TO-263 T/R (Alt: SP000691172)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 6000:€1.0900
    • 10000:€1.0900
    • 4000:€1.1900
    • 2000:€1.2900
    • 1000:€1.5900
    IPB320N20N3GATMA1
    DISTI # 47W3467    		Infineon Technologies AGMOSFET, N CHANNEL, 200V, 34A, TO263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 500:$1.7200
    • 100:$2.0200
    • 10:$2.3200
    • 1:$2.7400
    IPB320N20N3 G
    DISTI # 726-IPB320N20N3GXT    		Infineon Technologies AGMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		874
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2000:$1.3600
    • 5000:$1.3100
    IPB320N20N3GATMA1
    DISTI # 726-IPB320N20N3GATMA    		Infineon Technologies AGMOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		962
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2000:$1.3600
    • 5000:$1.3100
    IPB320N20N3GATMA1
    DISTI # 7528344    		Infineon Technologies AGMOSFET N-CHANNEL 200V 34A OPTIMOS3 TO263, EA15
    • 10:£1.5600
    • 1:£2.2200
    IPB320N20N3GATMA1
    DISTI # 2212854    		Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO263-32
    • 500:£1.3000
    • 250:£1.4500
    • 100:£1.5500
    • 10:£1.7800
    • 1:£2.3600
    IPB320N20N3GATMA1
    DISTI # 2212854    		Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO263-3
    RoHS: Compliant    		12
    • 1000:$2.1600
    • 500:$2.5600
    • 250:$2.8500
    • 100:$3.0100
    • 10:$3.4700
    • 1:$4.0800
    圖片 型號 描述
    IPB320N20N3GATMA1

    Mfr.#: IPB320N20N3GATMA1

    OMO.#: OMO-IPB320N20N3GATMA1

    		 MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    IPB320N20N3 G

    Mfr.#: IPB320N20N3 G

    OMO.#: OMO-IPB320N20N3-G

    		 MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    IPB320N20N3GATMA1-CUT TAPE

    Mfr.#: IPB320N20N3GATMA1-CUT TAPE

    OMO.#: OMO-IPB320N20N3GATMA1-CUT-TAPE-1190

    		 全新原裝
    IPB320N20N3

    Mfr.#: IPB320N20N3

    OMO.#: OMO-IPB320N20N3-1190

    		 全新原裝
    IPB320N20N3 G

    Mfr.#: IPB320N20N3 G

    OMO.#: OMO-IPB320N20N3-G-1190

    		 MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
    IPB320N20N3G

    Mfr.#: IPB320N20N3G

    OMO.#: OMO-IPB320N20N3G-1190

    		 Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
    IPB320N20N3G 320N20N

    Mfr.#: IPB320N20N3G 320N20N

    OMO.#: OMO-IPB320N20N3G-320N20N-1190

    		 全新原裝
    IPB320N20N3GATMA1

    Mfr.#: IPB320N20N3GATMA1

    OMO.#: OMO-IPB320N20N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 34A TO263-3
    IPB320N20N3GS

    Mfr.#: IPB320N20N3GS

    OMO.#: OMO-IPB320N20N3GS-1190

    		 全新原裝
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    IPB320N20N3 G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.96
    US$1.96
    10
    US$1.87
    US$18.67
    100
    US$1.77
    US$176.85
    500
    US$1.67
    US$835.15
    1000
    US$1.57
    US$1 572.00
    從...開始
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