IRF1503PBF

Mfr. #:: IRF1503PBF
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
生命週期:: 製造商新產品
數據表:: IRF1503PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 紅外線

產品分類: FET - 單

打包: 管子

單位重量: 0.211644 oz

安裝方式: 通孔

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 330 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 48 ns

上升時間: 130 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 240 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 3.3 mOhms

晶體管極性: N通道

典型關斷延遲時間: 59 ns

典型開啟延遲時間: 17 ns

Qg-門電荷: 130 nC

通道模式: 增強

Tags: IRF1503, IRF150, IRF15, IRF1, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF1503PBF 描述

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 240A;TO-220AB;PD 330W;-55de

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***et: Trans MOSFET N-CH 30V 240A 3-Pin(3+Tab) TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 30V, 240A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:75A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:3.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:960A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

型號	製造商	描述	庫存	價格
IRF1503PBF DISTI # IRF1503PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 75A TO-220AB RoHS: Compliant Min Qty: 3000 Container: Tube	Temporarily Out of Stock	3000:$1.5874
IRF1503PBF DISTI # 32628576	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 240A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	19000	3000:$1.4756
IRF1503PBF DISTI # IRF1503PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 240A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1503PBF) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	3000:$1.1900 5000:$1.1900 8000:$1.0900 15000:$1.0900 30000:$1.0900
IRF1503PBF DISTI # 70016944	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 240A,TO-220AB,PD 330W,-55de RoHS: Compliant	0	3000:$3.7600 6000:$3.6850 15000:$3.5720 30000:$3.4220 75000:$3.1960
IRF1503PBF DISTI # 942-IRF1503PBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC RoHS: Compliant	0	3000:$1.8000
IRF1503PBF	International Rectifier	POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 30V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB	35	30:$2.3588 9:$2.5947 1:$3.5382
IRF1503PBF DISTI # IRF1503PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,240A,330W,TO220AB	103	1:$2.3500 3:$2.1500 10:$1.8200 100:$1.5900
IRF1503PBF	International Rectifier	RoHS: Compliant	Europe - 220
IRF1503PBF DISTI # XSKDRABV0021334	Infineon Technologies AG	PowerField-EffectTransistor,100AI(D),40V,0.009ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-220AB RoHS: Compliant	1985 in Stock0 on Order	1985:$2.0640 400:$2.2080
IRF1503PBF DISTI # 8657440	Infineon Technologies AG	RoHS: Compliant	0	1000:$3.0600 500:$3.2900 250:$3.7100 100:$4.1600 10:$5.1300 1:$6.2300

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