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APT30GT60BRG

APT30GT60BRG
Mfr. #:
APT30GT60BRG
製造商:
Microchip / Microsemi
描述:
IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
生命週期:
製造商新產品
數據表:
APT30GT60BRG 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT30GT60BRG DatasheetAPT30GT60BRG Datasheet (P4-P6)
ECAD Model:
產品屬性
屬性值
製造商：
微芯片
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
2 V
最大柵極發射極電壓：
30 V
25 C 時的連續集電極電流：
64 A
Pd - 功耗：
250 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
打包：
管子
連續集電極電流 Ic 最大值：
64 A
高度：
5.31 mm
長度：
21.46 mm
工作溫度範圍：
- 55 C to + 150 C
寬度：
16.26 mm
品牌：
微芯片/Microsemi
連續集電極電流：
64 A
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
1
子類別：
IGBT
商品名：
迅雷IGBT
單位重量：
1.340411 oz
Tags
APT30GT60B, APT30GT, APT30G, APT30, APT3, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 64A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
French Electronic Distributor since 1988
***p One Stop
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 55A 3-Pin(3+Tab) TO-247AC
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UPBF
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 120 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50U; Fall Time Max:120ns; Fall Time tf:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***Yang
TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk
*** Electronic Components
IGBT Transistors Sgl N-Ch 600V SMPS
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF
***hine Compare
Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC
*** Electronics
IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon SCT
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***et
Trans IGBT Chip N-CH 600V 55A 3-Pin(3+Tab) TO-247AC
***icontronic
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ineon
Target Applications: Pump; Solar; UPS; Welding
*** Electronic Components
IGBT Transistors 600V UltraFast 8-60kHz
***i-Key Marketplace
IRG4PC50 - DISCRETE IGBT WITH AN
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50UD; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 80A 345000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
型號 製造商 描述 庫存 價格
APT30GT60BRG
DISTI # APT30GT60BRG-ND		Microsemi CorporationIGBT 600V 64A 250W TO247
RoHS: Compliant
Min Qty: 90
Container: Tube		Temporarily Out of Stock
  • 90:$7.0258
APT30GT60BRG
DISTI # 494-APT30GT60BRG		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
RoHS: Compliant		64
  • 1:$8.0000
  • 10:$7.2000
  • 25:$6.5600
  • 100:$5.9200
  • 250:$5.4000
  • 500:$4.9300
  • 1000:$4.3000
APT30GT60BRG
DISTI # APT30GT60BRG		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		0
  • 79:$4.2800
  • 100:$4.1700
  • 500:$4.1200
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可用性
庫存:
58
訂購:
2041
輸入數量:
APT30GT60BRG的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$8.00
US$8.00
10
US$7.20
US$72.00
25
US$6.56
US$164.00
100
US$5.92
US$592.00
250
US$5.40
US$1 350.00
500
US$4.93
US$2 465.00
1000
US$4.30
US$4 300.00
2500
US$3.95
US$9 875.00
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