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IXFK32N100P

IXFK32N100P
Mfr. #:
IXFK32N100P
製造商:
Littelfuse
描述:
MOSFET 32 Amps 1000V 0.32 Rds
生命週期:
製造商新產品
數據表:
IXFK32N100P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IXFK32N100P DatasheetIXFK32N100P Datasheet (P4)
ECAD Model:
更多信息:
IXFK32N100P 更多信息
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-264-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
1 kV
Id - 連續漏極電流：
32 A
Rds On - 漏源電阻：
320 mOhms
Vgs th - 柵源閾值電壓：
6.5 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
225 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
960 W
配置：
單身的
頻道模式：
增強
商品名：
高功率場效應晶體管
打包：
管子
高度：
26.16 mm
長度：
19.96 mm
系列：
IXFK32N100
晶體管類型：
1 N-Channel
類型：
極性功率 MOSFET HiPerFET
寬度：
5.13 mm
品牌：
IXYS
正向跨導 - 最小值：
13 S
秋季時間：
43 ns
產品類別：
MOSFET
上升時間：
55 ns
出廠包裝數量：
25
子類別：
MOSFET
典型關斷延遲時間：
76 ns
典型的開啟延遲時間：
50 ns
單位重量：
0.352740 oz
Tags
IXFK32N1, IXFK32N, IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***i-Key
MOSFET N-CH 1000V 32A TO264AA
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***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
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FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
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STMICROELECTRONICS 2STA1943Bipolar (BJT) Single Transistor, PNP, 230 V, 30 MHz, 150 W, 8 A, 80
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2STA1943 Series PNP 230 V 15 A Epitaxial Planar Bipolar Transistor - TO-264
***icroelectronics
High power PNP epitaxial planar bipolar transistor
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Trans GP BJT PNP 230V 15A 3-Pin TO-264 Tube
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Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
***ment14 APAC
Transistor, PNP TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W;
***nell
TRANSISTOR, PNP TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 3V; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 8A; Current Ic hFE: 1A; Device Marking: 2STA1943; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 80; Power Dissipation Ptot Max: 150W; Termination Type: Through Hole; Voltage Vcbo: 230V
***hard Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
***icroelectronics
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STMICROELECTRONICS 2STA2121Bipolar (BJT) Single Transistor, PNP, -250 V, 25 MHz, 220 W, -17 A, 80
***ical
Trans GP BJT PNP 250V 17A 3-Pin TO-264 Tube
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT PNP Power Transisto
***nell
TRANS PNP 250V 17A BIT-LA TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -250V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 220W; DC Collector Current: -17A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -3V; Current Ic Continuous a Max: -8A; Gain Bandwidth ft Typ: 25MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Through Hole; Transistor Type: Power Bipolar
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
型號 製造商 描述 庫存 價格
IXFK32N100P
DISTI # IXFK32N100P-ND		IXYS CorporationMOSFET N-CH 1000V 32A TO-264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$16.7888
IXFK32N100P
DISTI # 747-IXFK32N100P		IXYS CorporationMOSFET 32 Amps 1000V 0.32 Rds
RoHS: Compliant		24
  • 1:$20.8700
  • 10:$18.9800
  • 25:$17.5500
  • 50:$16.1500
  • 100:$15.7500
  • 250:$14.4400
  • 500:$13.1000
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TL431BQDBZT

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ADP3654ARHZ-RL

Mfr.#: ADP3654ARHZ-RL

OMO.#: OMO-ADP3654ARHZ-RL-ANALOG-DEVICES-INC-ADI

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DFLS1150Q-7

Mfr.#: DFLS1150Q-7

OMO.#: OMO-DFLS1150Q-7-DIODES

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可用性
庫存:
Available
訂購:
1992
輸入數量:
IXFK32N100P的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$20.87
US$20.87
10
US$18.98
US$189.80
25
US$17.55
US$438.75
50
US$16.15
US$807.50
100
US$15.75
US$1 575.00
250
US$14.44
US$3 610.00
500
US$13.10
US$6 550.00
1000
US$11.96
US$11 960.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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